Part Details for K4H560838E-TCB0 by Samsung Semiconductor
Overview of K4H560838E-TCB0 by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Price & Stock for K4H560838E-TCB0
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 32M X 8 DDR DRAM, 0.75 ns, PDSO66 | 18 |
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$5.2500 / $10.5000 | Buy Now |
Part Details for K4H560838E-TCB0
K4H560838E-TCB0 CAD Models
K4H560838E-TCB0 Part Data Attributes
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K4H560838E-TCB0
Samsung Semiconductor
Buy Now
Datasheet
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Compare Parts:
K4H560838E-TCB0
Samsung Semiconductor
DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSSOP66,.46 | |
| Pin Count | 66 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.75 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.003 A | |
| Supply Current-Max | 0.25 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for K4H560838E-TCB0
This table gives cross-reference parts and alternative options found for K4H560838E-TCB0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H560838E-TCB0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4H560838F-ULB0 | DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66 | Samsung Semiconductor | K4H560838E-TCB0 vs K4H560838F-ULB0 |
| K4H560838E-UCB00 | DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | K4H560838E-TCB0 vs K4H560838E-UCB00 |
| K4H560838F-TLA2 | DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66 | Samsung Semiconductor | K4H560838E-TCB0 vs K4H560838F-TLA2 |
| K4H560838F-UCA2 | DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66 | Samsung Semiconductor | K4H560838E-TCB0 vs K4H560838F-UCA2 |
| K4H560838E-TLB0T | DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66 | Samsung Semiconductor | K4H560838E-TCB0 vs K4H560838E-TLB0T |
| K4H560838E-TCA2 | DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | K4H560838E-TCB0 vs K4H560838E-TCA2 |
| K4H560838E-TLB00 | DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | K4H560838E-TCB0 vs K4H560838E-TLB00 |
| K4H560838E-UCA20 | DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | K4H560838E-TCB0 vs K4H560838E-UCA20 |
| K4H560838E-ULA20 | DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | K4H560838E-TCB0 vs K4H560838E-ULA20 |
| K4H560838E-TLA20 | DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | K4H560838E-TCB0 vs K4H560838E-TLA20 |