Part Details for K4E661612B-TL45 by Samsung Semiconductor
Overview of K4E661612B-TL45 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| TL4581DR | Texas Instruments | Dual Low-Noise High-Drive Operational Amplifier 8-SOIC 0 to 70 | |
| TL4581D | Texas Instruments | Dual Low-Noise High-Drive Operational Amplifier 8-SOIC 0 to 70 | |
| LP5900TL-4.5/NOPB | Texas Instruments | 150mA Ultralow-Noise LDO for RF and Analog Circuits Requires No Bypass Capacitor 4-DSBGA -40 to 125 |
Part Details for K4E661612B-TL45
K4E661612B-TL45 CAD Models
K4E661612B-TL45 Part Data Attributes
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K4E661612B-TL45
Samsung Semiconductor
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Datasheet
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K4E661612B-TL45
Samsung Semiconductor
EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, | |
| Pin Count | 50 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FAST PAGE WITH EDO | |
| Access Time-Max | 45 ns | |
| Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G50 | |
| Length | 20.95 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | EDO DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 50 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for K4E661612B-TL45
This table gives cross-reference parts and alternative options found for K4E661612B-TL45. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4E661612B-TL45, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4E661612C-TC450 | EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4E661612B-TL45 vs K4E661612C-TC450 |
| K4E641612C-TC450 | EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4E661612B-TL45 vs K4E641612C-TC450 |
| KM416V4004BS-L45 | EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4E661612B-TL45 vs KM416V4004BS-L45 |
| K4E641612B-TC45 | EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4E661612B-TL45 vs K4E641612B-TC45 |
| HY51V65163HGLT-45 | EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | SK Hynix Inc | K4E661612B-TL45 vs HY51V65163HGLT-45 |
| K4E641612B-TL45 | EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4E661612B-TL45 vs K4E641612B-TL45 |
| KM416V4004CT-L45 | EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4E661612B-TL45 vs KM416V4004CT-L45 |
| K4E661612C-TL450 | EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4E661612B-TL45 vs K4E661612C-TL450 |
| KM416V4104BS-L45 | EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4E661612B-TL45 vs KM416V4104BS-L45 |
| HY51V65173HGLT-45E | EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | SK Hynix Inc | K4E661612B-TL45 vs HY51V65173HGLT-45E |