Part Details for K4B2G1646B-HCH90 by Samsung Semiconductor
Overview of K4B2G1646B-HCH90 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Part Details for K4B2G1646B-HCH90
K4B2G1646B-HCH90 CAD Models
K4B2G1646B-HCH90 Part Data Attributes
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K4B2G1646B-HCH90
Samsung Semiconductor
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Datasheet
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K4B2G1646B-HCH90
Samsung Semiconductor
DDR DRAM, 128MX16, 0.25ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA96,9X16,32 | |
| Pin Count | 96 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.25 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 667 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 8 | |
| JESD-30 Code | R-PBGA-B96 | |
| JESD-609 Code | e1 | |
| Length | 13.3 mm | |
| Memory Density | 2147483648 bit | |
| Memory IC Type | DDR3 DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 96 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 128MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA96,9X16,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 8 | |
| Standby Current-Max | 0.012 A | |
| Supply Current-Max | 0.3 mA | |
| Supply Voltage-Max (Vsup) | 1.575 V | |
| Supply Voltage-Min (Vsup) | 1.425 V | |
| Supply Voltage-Nom (Vsup) | 1.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | Tin/Silver/Copper (Sn97.0Ag2.5Cu0.5) | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 9 mm |
Alternate Parts for K4B2G1646B-HCH90
This table gives cross-reference parts and alternative options found for K4B2G1646B-HCH90. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4B2G1646B-HCH90, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| EDJ2116DEBG-DJ-F | DDR DRAM, 128MX16, 20ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | Elpida Memory Inc | K4B2G1646B-HCH90 vs EDJ2116DEBG-DJ-F |
| MT41J128M16HA-187:D | DDR DRAM, 128MX16, CMOS, PBGA96, 9 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | K4B2G1646B-HCH90 vs MT41J128M16HA-187:D |
| NT5CB128M16BP-DG | DDR DRAM, 128MX16, CMOS, PBGA96, 0.80 MM PITCH, ROHS COMPLIANT, WBGA-96 | Nanya Technology Corporation | K4B2G1646B-HCH90 vs NT5CB128M16BP-DG |
| H5TQ2G63BFR-PBJ | DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | SK Hynix Inc | K4B2G1646B-HCH90 vs H5TQ2G63BFR-PBJ |
| MT41K128M16HA-15E:D | DDR DRAM, 128MX16, CMOS, PBGA96, 9 X 14 MM, LEAD FREE, FBGA-96 | Silicon360 | K4B2G1646B-HCH90 vs MT41K128M16HA-15E:D |
| H5TQ2G63FFR-PBC | DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, FBGA-96 | SK Hynix Inc | K4B2G1646B-HCH90 vs H5TQ2G63FFR-PBC |
| H5TQ2G63DFR-RDJ | DDR DRAM, 128MX16, 0.195ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | SK Hynix Inc | K4B2G1646B-HCH90 vs H5TQ2G63DFR-RDJ |
| H5TQ2G63FFR-PBL | DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, FBGA-96 | SK Hynix Inc | K4B2G1646B-HCH90 vs H5TQ2G63FFR-PBL |
| H5TQ2G63DFR-PBC | DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | SK Hynix Inc | K4B2G1646B-HCH90 vs H5TQ2G63DFR-PBC |
| MT41J128M16HA-125AAT:D | DDR DRAM, 128MX16, CMOS, PBGA96, 9 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | K4B2G1646B-HCH90 vs MT41J128M16HA-125AAT:D |