Datasheets
K4A8G165WB-BIRC0 by: Samsung Semiconductor

DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96

Part Details for K4A8G165WB-BIRC0 by Samsung Semiconductor

Overview of K4A8G165WB-BIRC0 by Samsung Semiconductor

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Part Details for K4A8G165WB-BIRC0

K4A8G165WB-BIRC0 CAD Models

K4A8G165WB-BIRC0 Part Data Attributes

K4A8G165WB-BIRC0 Samsung Semiconductor
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K4A8G165WB-BIRC0 Samsung Semiconductor DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description TFBGA,
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.36
Samacsys Manufacturer SAMSUNG
Access Mode MULTI BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B96
Length 13.3 mm
Memory Density 8589934592 bit
Memory IC Type DDR4 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 96
Number of Words 536870912 words
Number of Words Code 512000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 512MX16
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Refresh Cycles 65536
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Current-Max 0.0455 mA
Supply Voltage-Max (Vsup) 1.26 V
Supply Voltage-Min (Vsup) 1.14 V
Supply Voltage-Nom (Vsup) 1.2 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 7.5 mm

Alternate Parts for K4A8G165WB-BIRC0

This table gives cross-reference parts and alternative options found for K4A8G165WB-BIRC0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4A8G165WB-BIRC0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4A8G165WB-BCRC0 DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Samsung Semiconductor K4A8G165WB-BIRC0 vs K4A8G165WB-BCRC0
K4A8G165WB-BCRC DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Samsung Semiconductor K4A8G165WB-BIRC0 vs K4A8G165WB-BCRC
Part Number Description Manufacturer Compare
MT40A512M16LY-062E:E DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Micron Technology Inc K4A8G165WB-BIRC0 vs MT40A512M16LY-062E:E
K4A8G165WB-BCRC DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Samsung Semiconductor K4A8G165WB-BIRC0 vs K4A8G165WB-BCRC
MT40A512M16LY-062EAUT:E DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Micron Technology Inc K4A8G165WB-BIRC0 vs MT40A512M16LY-062EAUT:E
MT40A512M16TB-062E:R DDR4 DRAM, 512MX16, CMOS, PBGA96, Micron Technology Inc K4A8G165WB-BIRC0 vs MT40A512M16TB-062E:R
K4A8G165WB-BCRC0 DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Samsung Semiconductor K4A8G165WB-BIRC0 vs K4A8G165WB-BCRC0
IS43QR16512A-075VBL DDR DRAM, Integrated Silicon Solution Inc K4A8G165WB-BIRC0 vs IS43QR16512A-075VBL
MT40A512M16LY-062EAT:E DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Micron Technology Inc K4A8G165WB-BIRC0 vs MT40A512M16LY-062EAT:E

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