Part Details for K3N6U1000D-YE10 by Samsung Semiconductor
Overview of K3N6U1000D-YE10 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
ISYE-1009RH-Q | Renesas Electronics Corporation | Radiation Hardened 2.5V Reference | |
ISYE-1009EH-Q | Renesas Electronics Corporation | Radiation Hardened 2.5V Reference | |
ISYE-1009EH/PROTO | Renesas Electronics Corporation | Radiation Hardened 2.5V Reference |
Part Details for K3N6U1000D-YE10
K3N6U1000D-YE10 CAD Models
K3N6U1000D-YE10 Part Data Attributes
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K3N6U1000D-YE10
Samsung Semiconductor
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Datasheet
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K3N6U1000D-YE10
Samsung Semiconductor
MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP1 | |
Package Description | TSOP1, TSSOP48,.71,20 | |
Pin Count | 48 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.71 | |
Access Time-Max | 100 ns | |
Additional Feature | ALSO CONFIGURABLE AS 2M X 16 | |
Alternate Memory Width | 8 | |
JESD-30 Code | R-PDSO-G48 | |
JESD-609 Code | e0 | |
Length | 16.4 mm | |
Memory Density | 33554432 bit | |
Memory IC Type | MASK ROM | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Terminals | 48 | |
Number of Words | 4194304 words | |
Number of Words Code | 4000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -20 °C | |
Organization | 4MX8 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP1 | |
Package Equivalence Code | TSSOP48,.71,20 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Parallel/Serial | PARALLEL | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.2 mm | |
Standby Current-Max | 0.00003 A | |
Supply Current-Max | 0.035 mA | |
Supply Voltage-Max (Vsup) | 3.3 V | |
Supply Voltage-Min (Vsup) | 2.7 V | |
Supply Voltage-Nom (Vsup) | 3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.5 mm | |
Terminal Position | DUAL | |
Width | 12 mm |
Alternate Parts for K3N6U1000D-YE10
This table gives cross-reference parts and alternative options found for K3N6U1000D-YE10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K3N6U1000D-YE10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
K3N6V1000D-YE10 | MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | Samsung Semiconductor | K3N6U1000D-YE10 vs K3N6V1000D-YE10 |
K3P6U1000D-YC10 | MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | Samsung Semiconductor | K3N6U1000D-YE10 vs K3P6U1000D-YC10 |
K3P6V1000D-YE10 | MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | Samsung Semiconductor | K3N6U1000D-YE10 vs K3P6V1000D-YE10 |
KM23V32005BETY-10 | MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | Samsung Semiconductor | K3N6U1000D-YE10 vs KM23V32005BETY-10 |
KM23V32000BTY-10 | MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | Samsung Semiconductor | K3N6U1000D-YE10 vs KM23V32000BTY-10 |
LH53CV32800T | MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, PLASTIC, TSOP1-48 | Sharp Corp | K3N6U1000D-YE10 vs LH53CV32800T |
KM23V32005BTY-10 | MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | Samsung Semiconductor | K3N6U1000D-YE10 vs KM23V32005BTY-10 |
KM23V32005BTY | MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | Samsung Semiconductor | K3N6U1000D-YE10 vs KM23V32005BTY |
K3P6U1000D-YE10 | MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | Samsung Semiconductor | K3N6U1000D-YE10 vs K3P6U1000D-YE10 |
KM23V32000BETY-10 | MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | Samsung Semiconductor | K3N6U1000D-YE10 vs KM23V32000BETY-10 |