Part Details for JANTXV2N6798U by Microsemi Corporation
Overview of JANTXV2N6798U by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Part Details for JANTXV2N6798U
JANTXV2N6798U CAD Models
JANTXV2N6798U Part Data Attributes
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JANTXV2N6798U
Microsemi Corporation
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Datasheet
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JANTXV2N6798U
Microsemi Corporation
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | LCC | |
| Package Description | CERAMIC, LCC-18 | |
| Pin Count | 18 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Avalanche Energy Rating (Eas) | 98 mJ | |
| Case Connection | SOURCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 0.42 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CQCC-N15 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 15 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/557 | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | NO LEAD | |
| Terminal Position | QUAD | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JANTXV2N6798U
This table gives cross-reference parts and alternative options found for JANTXV2N6798U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6798U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFE230-JQR-BE4 | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | JANTXV2N6798U vs IRFE230-JQR-BE4 |
| 2N6798U | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18 | Microsemi Corporation | JANTXV2N6798U vs 2N6798U |
| IRFE230-JQR-B | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | JANTXV2N6798U vs IRFE230-JQR-B |
| JANTX2N6798U | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18 | Microsemi Corporation | JANTXV2N6798U vs JANTX2N6798U |
| IRFE230E4 | 4.8A, 200V, 0.46ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | JANTXV2N6798U vs IRFE230E4 |
| JANTX2N6798U | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Infineon Technologies AG | JANTXV2N6798U vs JANTX2N6798U |
| IRFE230-JQR-B | 4.8A, 200V, 0.46ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | JANTXV2N6798U vs IRFE230-JQR-B |
| IRFE230E4 | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | JANTXV2N6798U vs IRFE230E4 |
| IRFE230 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Infineon Technologies AG | JANTXV2N6798U vs IRFE230 |
| IRFE230-JQR-BE4 | 4.8A, 200V, 0.46ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | JANTXV2N6798U vs IRFE230-JQR-BE4 |