JANTXV2N6798U
vs
IRFE230PBF
feature comparison
Pbfree Code |
No
|
Yes
|
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
MICROSEMI CORP
|
INTERNATIONAL RECTIFIER CORP
|
Part Package Code |
LCC
|
LCC
|
Package Description |
CERAMIC, LCC-18
|
CHIP CARRIER, R-CQCC-N15
|
Pin Count |
18
|
18
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Microsemi Corporation
|
|
Avalanche Energy Rating (Eas) |
98 mJ
|
98 mJ
|
Case Connection |
SOURCE
|
SOURCE
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
5.5 A
|
5.5 A
|
Drain-source On Resistance-Max |
0.42 Ω
|
0.46 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-CQCC-N15
|
R-CQCC-N15
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
15
|
15
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
22 A
|
22 A
|
Qualification Status |
Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500/557
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
QUAD
|
QUAD
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
HTS Code |
|
8541.29.00.95
|
Additional Feature |
|
HIGH RELIABILITY
|
Operating Temperature-Max |
|
150 °C
|
Peak Reflow Temperature (Cel) |
|
260
|
Power Dissipation Ambient-Max |
|
22 W
|
Time@Peak Reflow Temperature-Max (s) |
|
40
|
Turn-off Time-Max (toff) |
|
90 ns
|
Turn-on Time-Max (ton) |
|
80 ns
|
|
|
|
Compare JANTXV2N6798U with alternatives
Compare IRFE230PBF with alternatives