Datasheets
JANTXV2N6760 by:

Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN

Part Details for JANTXV2N6760 by Microsemi Corporation

Overview of JANTXV2N6760 by Microsemi Corporation

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Part Details for JANTXV2N6760

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JANTXV2N6760 Part Data Attributes

JANTXV2N6760 Microsemi Corporation
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JANTXV2N6760 Microsemi Corporation Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MICROSEMI CORP
Part Package Code TO-3
Package Description TO-3, 2 PIN
Pin Count 2
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature RADIATION HARDENED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 1.22 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 8 A
Qualification Status Qualified
Reference Standard MIL-19500
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for JANTXV2N6760

This table gives cross-reference parts and alternative options found for JANTXV2N6760. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6760, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N6760TXV Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Microsemi Corporation JANTXV2N6760 vs 2N6760TXV
JAN2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JANTXV2N6760 vs JAN2N6760
2N6760 5.5A, 400V, 1.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Power and Hybrid / Semelab Limited JANTXV2N6760 vs 2N6760
2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, METAL CAN-2 Microsemi Corporation JANTXV2N6760 vs 2N6760
UFN330 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JANTXV2N6760 vs UFN330
JANTX2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JANTXV2N6760 vs JANTX2N6760
IRF331 5.5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC JANTXV2N6760 vs IRF331
JANTX2N6760 5.5A, 400V, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN Intersil Corporation JANTXV2N6760 vs JANTX2N6760
2N6760R1 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors JANTXV2N6760 vs 2N6760R1
IRF331 5.5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC JANTXV2N6760 vs IRF331
Part Number Description Manufacturer Compare
IRF330-JQR-BR1 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors JANTXV2N6760 vs IRF330-JQR-BR1
IRF332 Power Field-Effect Transistor, 4.5A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier JANTXV2N6760 vs IRF332
2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, METAL CAN-2 Microsemi Corporation JANTXV2N6760 vs 2N6760
IRF322 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,2.8A I(D),TO-204AA Intersil Corporation JANTXV2N6760 vs IRF322
JANTXV2N6760 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, FORMERLY TO-3, 2 PIN Intersil Corporation JANTXV2N6760 vs JANTXV2N6760
IRF320 Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JANTXV2N6760 vs IRF320
JAN2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JANTXV2N6760 vs JAN2N6760
2N6760TXV 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC JANTXV2N6760 vs 2N6760TXV
JAN2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Microsemi Corporation JANTXV2N6760 vs JAN2N6760
2N6760R1 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors JANTXV2N6760 vs 2N6760R1

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