JANTXV2N6760
vs
IRF322
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
MICROSEMI CORP
|
INTERSIL CORP
|
Part Package Code |
TO-3
|
|
Package Description |
TO-3, 2 PIN
|
|
Pin Count |
2
|
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
RADIATION HARDENED
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
400 V
|
|
Drain Current-Max (ID) |
5.5 A
|
2.8 A
|
Drain-source On Resistance-Max |
1.22 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-204AA
|
|
JESD-30 Code |
O-MBFM-P2
|
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
METAL
|
|
Package Shape |
ROUND
|
|
Package Style |
FLANGE MOUNT
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
8 A
|
|
Qualification Status |
Qualified
|
|
Reference Standard |
MIL-19500
|
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
PIN/PEG
|
|
Terminal Position |
BOTTOM
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
1
|
1
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
50 W
|
|
|
|
Compare JANTXV2N6760 with alternatives
Compare IRF322 with alternatives