Datasheets
JANTX2N7227D by: International Rectifier

Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

Part Details for JANTX2N7227D by International Rectifier

Overview of JANTX2N7227D by International Rectifier

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Part Details for JANTX2N7227D

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JANTX2N7227D Part Data Attributes

JANTX2N7227D International Rectifier
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JANTX2N7227D International Rectifier Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 700 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.415 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA
JESD-30 Code R-MSFM-P3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 150 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Reference Standard MILITARY STANDARD (USA)
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 300 ns
Turn-on Time-Max (ton) 225 ns

Alternate Parts for JANTX2N7227D

This table gives cross-reference parts and alternative options found for JANTX2N7227D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N7227D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
JANTXV2N7227D Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier JANTX2N7227D vs JANTXV2N7227D
2N7227DPBF 14A, 400V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Infineon Technologies AG JANTX2N7227D vs 2N7227DPBF
2N7227D Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Infineon Technologies AG JANTX2N7227D vs 2N7227D
2N7227D Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier JANTX2N7227D vs 2N7227D
IRFM350D Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN International Rectifier JANTX2N7227D vs IRFM350D
IRFM350DPBF Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN International Rectifier JANTX2N7227D vs IRFM350DPBF
Part Number Description Manufacturer Compare
JANTXV2N7227U Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN Infineon Technologies AG JANTX2N7227D vs JANTXV2N7227U
IRFM350-JQR-B 14A, 400V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA TT Electronics Power and Hybrid / Semelab Limited JANTX2N7227D vs IRFM350-JQR-B
IRFM350-QR-B 14A, 400V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA TT Electronics Power and Hybrid / Semelab Limited JANTX2N7227D vs IRFM350-QR-B
JANTV2N7227 Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA Advanced Power Technology JANTX2N7227D vs JANTV2N7227
JANTXV2N7227 Power Field-Effect Transistor, 14A I(D), 400V, 0.315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Advanced Power Technology JANTX2N7227D vs JANTXV2N7227
IRFM350 Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Temic Semiconductors JANTX2N7227D vs IRFM350
2N7227U Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, ROHS COMPLIANT, U-PKG-3 Microsemi Corporation JANTX2N7227D vs 2N7227U
JANTX2N7227U Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN Infineon Technologies AG JANTX2N7227D vs JANTX2N7227U
2N7227 Power Field-Effect Transistor, 14A I(D), 400V, 0.315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN Sensitron Semiconductors JANTX2N7227D vs 2N7227
IRFM350 Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Infineon Technologies AG JANTX2N7227D vs IRFM350

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