Part Details for JANTX2N6790U by Infineon Technologies AG
Overview of JANTX2N6790U by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for JANTX2N6790U
JANTX2N6790U CAD Models
JANTX2N6790U Part Data Attributes
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JANTX2N6790U
Infineon Technologies AG
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Datasheet
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JANTX2N6790U
Infineon Technologies AG
Power Field-Effect Transistor, 2.8A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | HERMETIC SEALED, LCC-18 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 0.242 mJ | |
Case Connection | SOURCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 2.8 A | |
Drain-source On Resistance-Max | 0.85 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-CQCC-N15 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 15 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 20 W | |
Pulsed Drain Current-Max (IDM) | 11 A | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500/555 | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | NO LEAD | |
Terminal Position | QUAD | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for JANTX2N6790U
This table gives cross-reference parts and alternative options found for JANTX2N6790U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6790U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFE220E4 | Power Field-Effect Transistor, 2.8A I(D), 200V, 0.92ohm, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | JANTX2N6790U vs IRFE220E4 |
JANTXV2N6790U | Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | JANTX2N6790U vs JANTXV2N6790U |
IRFE220 | Power Field-Effect Transistor, 2.8A I(D), 200V, 0.92ohm, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | JANTX2N6790U vs IRFE220 |
IRFE220PBF | Power Field-Effect Transistor, 2.8A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | International Rectifier | JANTX2N6790U vs IRFE220PBF |
IRFE220E4 | 2.8A, 200V, 0.92ohm, Si, POWER, MOSFET, LCC4-15 | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N6790U vs IRFE220E4 |
IRFE220 | Power Field-Effect Transistor, 2.8A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Infineon Technologies AG | JANTX2N6790U vs IRFE220 |
JANTX2N6790U | Power Field-Effect Transistor, 2.8A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | International Rectifier | JANTX2N6790U vs JANTX2N6790U |