Part Details for IRFE220E4 by TT Electronics Power and Hybrid / Semelab Limited
Overview of IRFE220E4 by TT Electronics Power and Hybrid / Semelab Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for IRFE220E4
IRFE220E4 CAD Models
IRFE220E4 Part Data Attributes
|
|
IRFE220E4
TT Electronics Power and Hybrid / Semelab Limited
Buy Now
Datasheet
|
Compare Parts:
IRFE220E4
TT Electronics Power and Hybrid / Semelab Limited
2.8A, 200V, 0.92ohm, Si, POWER, MOSFET, LCC4-15
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SEMELAB LTD | |
| Package Description | CHIP CARRIER, R-CQCC-N15 | |
| Pin Count | 15 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 2.8 A | |
| Drain-source On Resistance-Max | 0.92 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CQCC-N15 | |
| JESD-609 Code | e4 | |
| Number of Terminals | 15 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Position | QUAD | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFE220E4
This table gives cross-reference parts and alternative options found for IRFE220E4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFE220E4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| JANTX2N6790U | Power Field-Effect Transistor, 2.8A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Infineon Technologies AG | IRFE220E4 vs JANTX2N6790U |
| IRFE220E4 | Power Field-Effect Transistor, 2.8A I(D), 200V, 0.92ohm, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | IRFE220E4 vs IRFE220E4 |
| JANTXV2N6790U | Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRFE220E4 vs JANTXV2N6790U |
| IRFE220 | Power Field-Effect Transistor, 2.8A I(D), 200V, 0.92ohm, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | IRFE220E4 vs IRFE220 |
| IRFE220PBF | Power Field-Effect Transistor, 2.8A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | International Rectifier | IRFE220E4 vs IRFE220PBF |
| IRFE220 | Power Field-Effect Transistor, 2.8A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Infineon Technologies AG | IRFE220E4 vs IRFE220 |
| JANTX2N6790U | Power Field-Effect Transistor, 2.8A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | International Rectifier | IRFE220E4 vs JANTX2N6790U |