Datasheets
JANHCA2N7218 by:

Power Field-Effect Transistor, 28A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3

Part Details for JANHCA2N7218 by Infineon Technologies AG

Overview of JANHCA2N7218 by Infineon Technologies AG

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Part Details for JANHCA2N7218

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JANHCA2N7218 Part Data Attributes

JANHCA2N7218 Infineon Technologies AG
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JANHCA2N7218 Infineon Technologies AG Power Field-Effect Transistor, 28A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description DIE-3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 250 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 28 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUUC-N3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 112 A
Qualification Status Qualified
Reference Standard MIL-19500/596F
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form NO LEAD
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for JANHCA2N7218

This table gives cross-reference parts and alternative options found for JANHCA2N7218. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANHCA2N7218, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
JANHCA2N7218 Power Field-Effect Transistor, 28A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 International Rectifier JANHCA2N7218 vs JANHCA2N7218
IRFM140R1 Power Field-Effect Transistor, 28A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 TT Electronics Resistors JANHCA2N7218 vs IRFM140R1
JANTX2N7218 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Microsemi Corporation JANHCA2N7218 vs JANTX2N7218
IRFM140-JQR-BR1 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors JANHCA2N7218 vs IRFM140-JQR-BR1
IRFM140 28A, 100V, 0.125ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 TT Electronics Power and Hybrid / Semelab Limited JANHCA2N7218 vs IRFM140
IRFM140-JQR-B Power Field-Effect Transistor, 28A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 TT Electronics Resistors JANHCA2N7218 vs IRFM140-JQR-B
IRFM140 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Infineon Technologies AG JANHCA2N7218 vs IRFM140
2N7218 Power Field-Effect Transistor, 28A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 TT Electronics Resistors JANHCA2N7218 vs 2N7218
2N7218 28A, 100V, 0.125ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 TT Electronics Power and Hybrid / Semelab Limited JANHCA2N7218 vs 2N7218
IRFM140-JQR-B 28A, 100V, 0.125ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 TT Electronics Power and Hybrid / Semelab Limited JANHCA2N7218 vs IRFM140-JQR-B
Part Number Description Manufacturer Compare
IRFN150SMD-JQR-BR4 Power Field-Effect Transistor, 27A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Resistors JANHCA2N7218 vs IRFN150SMD-JQR-BR4
2N7218DPBF Power Field-Effect Transistor, 28A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier JANHCA2N7218 vs 2N7218DPBF
IRFN140SM Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Resistors JANHCA2N7218 vs IRFN140SM
IRFM150-JQR-BR1 34A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA TT Electronics Power and Hybrid / Semelab Limited JANHCA2N7218 vs IRFM150-JQR-BR1
2N7224-QR-EB 34A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA TT Electronics Power and Hybrid / Semelab Limited JANHCA2N7218 vs 2N7224-QR-EB
SHD2254F Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Sensitron Semiconductors JANHCA2N7218 vs SHD2254F
IRFM150 Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TT Electronics Resistors JANHCA2N7218 vs IRFM150
2N7224 Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, ROHS COMPLIANT, CERAMIC PACKAGE-3 Microsemi Corporation JANHCA2N7218 vs 2N7224
SFF75N10MTX Power Field-Effect Transistor, 56A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Solid State Devices Inc (SSDI) JANHCA2N7218 vs SFF75N10MTX
2N7224R1 Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TT Electronics Resistors JANHCA2N7218 vs 2N7224R1

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