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Transistors Power Field-Effect Transistors JAN2N6762

JAN2N6762
Description: Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,

Overview of JAN2N6762 by Unitrode Corporation

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Where used in Applications: Consumer Electronics Audio and Video Systems

CAD Models for JAN2N6762 by Unitrode Corporation
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Part Data Attributes for JAN2N6762 by Unitrode Corporation
Parametric Data

JAN2N6762
Unitrode Corporation
Buy Now
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
UNITRODE CORP
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
4.5 A
Drain-source On Resistance-Max
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
60 pF
JEDEC-95 Code
TO-204AA
JESD-30 Code
O-MBFM-P2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
75 W
Pulsed Drain Current-Max (IDM)
7 A
Qualification Status
Not Qualified
Reference Standard
MILITARY STANDARD (USA)
Surface Mount
NO
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
85 ns
Turn-on Time-Max (ton)
60 ns
Want to compare parts?
  1. JAN2N6762
    Unitrode Corporation
    Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
    VS

Alternate Parts for JAN2N6762

This table gives cross-reference parts and alternative options found for JAN2N6762. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN2N6762, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors JAN2N6762 vs 2N6762
2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG JAN2N6762 vs 2N6762
JANTX2N6762 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC JAN2N6762 vs JANTX2N6762
JANTXV2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corporation JAN2N6762 vs JANTXV2N6762
JANTX2N6762 Power Field-Effect Transistor, 5.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor JAN2N6762 vs JANTX2N6762
JANTX2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JAN2N6762 vs JANTX2N6762
JANTX2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products JAN2N6762 vs JANTX2N6762
JAN2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN International Rectifier JAN2N6762 vs JAN2N6762
IRF430R1 Power Field-Effect Transistor, 4.5A I(D), 20V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors JAN2N6762 vs IRF430R1
JANTX2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corporation JAN2N6762 vs JANTX2N6762
Part Number Description Manufacturer Compare
IRF430R1 4.5A, 20V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited JAN2N6762 vs IRF430R1
JAN2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN International Rectifier JAN2N6762 vs JAN2N6762
2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corporation JAN2N6762 vs 2N6762
IRF430 4.5A, 20V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited JAN2N6762 vs IRF430
JANTX2N6762 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC JAN2N6762 vs JANTX2N6762
2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors JAN2N6762 vs 2N6762
JANTXV2N6762 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG JAN2N6762 vs JANTXV2N6762
2N6762 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited JAN2N6762 vs 2N6762
IRF430 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 Vishay Siliconix JAN2N6762 vs IRF430
IRF430R1 Power Field-Effect Transistor, 4.5A I(D), 20V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors JAN2N6762 vs IRF430R1

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