IXTP06N120P
Description: Power Field-Effect Transistor, 0.6A I(D), 1200V, 34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Overview of IXTP06N120P by Littelfuse Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 2 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IXTP06N120P by Littelfuse Inc

Part # Manufacturer Description Stock Price Buy
DISTI # 03AH1611
Newark Disc Mosfet N-Ch Std-Polar To-220Ab/Fp/ Tube |Littelfuse IXTP06N120P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $3.1800
  • 500 $2.9000
  • 1,000 $2.5600
  • 2,500 $2.3800
$2.3800 / $3.1800 Buy Now
DISTI # IXTP06N120P-ND
DigiKey MOSFET N-CH 1200V 600MA TO220AB Min Qty: 1 Lead time: 24 Weeks Container: Tube Temporarily Out of Stock
  • 1 $4.7800
  • 50 $3.7896
  • 100 $3.2482
  • 500 $2.8873
  • 1,000 $2.4723
  • 2,000 $2.3279
$2.3279 / $4.7800 Buy Now

CAD Models for IXTP06N120P by Littelfuse Inc
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Part Data Attributes for IXTP06N120P by Littelfuse Inc

IXTP06N120P
Littelfuse Inc
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
LITTELFUSE INC
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
LITTELFUSE
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
50 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
1200 V
Drain Current-Max (ID)
0.6 A
Drain-source On Resistance-Max
34 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
42 W
Pulsed Drain Current-Max (IDM)
1.2 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Matte Tin (Sn)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IXTP06N120P
    Littelfuse Inc
    Power Field-Effect Transistor, 0.6A I(D), 1200V, 34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
    VS

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