Part Details for IXTN61N50 by IXYS Corporation
Overview of IXTN61N50 by IXYS Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IXTN61N50
IXTN61N50 CAD Models
IXTN61N50 Part Data Attributes
|
IXTN61N50
IXYS Corporation
Buy Now
Datasheet
|
Compare Parts:
IXTN61N50
IXYS Corporation
Power Field-Effect Transistor, 61A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
|
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | IXYS CORP | |
Package Description | FLANGE MOUNT, R-PUFM-D4 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 61 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PUFM-D4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 625 W | |
Pulsed Drain Current-Max (IDM) | 244 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | SOLDER LUG | |
Terminal Position | UPPER | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTN61N50
This table gives cross-reference parts and alternative options found for IXTN61N50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTN61N50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXFE44N50Q | Power Field-Effect Transistor, 39A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXYS Corporation | IXTN61N50 vs IXFE44N50Q |
IXFN48N50U2 | Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXTN61N50 vs IXFN48N50U2 |
IXTN79N20 | Power Field-Effect Transistor, 79A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4 | IXYS Corporation | IXTN61N50 vs IXTN79N20 |
IXTN58N50 | Power Field-Effect Transistor, 58A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXTN61N50 vs IXTN58N50 |
APT50M60JN | Power Field-Effect Transistor, 71A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | IXTN61N50 vs APT50M60JN |
IXFE48N50QD3 | Power Field-Effect Transistor, 41A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXYS Corporation | IXTN61N50 vs IXFE48N50QD3 |
APT5012JNU2 | 43A, 500V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET | Microsemi Corporation | IXTN61N50 vs APT5012JNU2 |
APT5010JN | Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | IXTN61N50 vs APT5010JN |
IXFN80N50Q3 | Power Field-Effect Transistor, 63A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXTN61N50 vs IXFN80N50Q3 |
IXFN100N20 | Power Field-Effect Transistor, 100A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | IXTN61N50 vs IXFN100N20 |