Datasheets
IXTN61N50 by: IXYS Corporation

Power Field-Effect Transistor, 61A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

Part Details for IXTN61N50 by IXYS Corporation

Overview of IXTN61N50 by IXYS Corporation

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Part Details for IXTN61N50

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IXTN61N50 Part Data Attributes

IXTN61N50 IXYS Corporation
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IXTN61N50 IXYS Corporation Power Field-Effect Transistor, 61A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
Part Life Cycle Code Obsolete
Ihs Manufacturer IXYS CORP
Package Description FLANGE MOUNT, R-PUFM-D4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 61 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-D4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 625 W
Pulsed Drain Current-Max (IDM) 244 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form SOLDER LUG
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTN61N50

This table gives cross-reference parts and alternative options found for IXTN61N50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTN61N50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFE44N50Q Power Field-Effect Transistor, 39A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN IXYS Corporation IXTN61N50 vs IXFE44N50Q
IXFN48N50U2 Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 IXYS Corporation IXTN61N50 vs IXFN48N50U2
IXTN79N20 Power Field-Effect Transistor, 79A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4 IXYS Corporation IXTN61N50 vs IXTN79N20
IXTN58N50 Power Field-Effect Transistor, 58A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 IXYS Corporation IXTN61N50 vs IXTN58N50
APT50M60JN Power Field-Effect Transistor, 71A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology IXTN61N50 vs APT50M60JN
IXFE48N50QD3 Power Field-Effect Transistor, 41A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN IXYS Corporation IXTN61N50 vs IXFE48N50QD3
APT5012JNU2 43A, 500V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET Microsemi Corporation IXTN61N50 vs APT5012JNU2
APT5010JN Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology IXTN61N50 vs APT5010JN
IXFN80N50Q3 Power Field-Effect Transistor, 63A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 IXYS Corporation IXTN61N50 vs IXFN80N50Q3
IXFN100N20 Power Field-Effect Transistor, 100A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 Littelfuse Inc IXTN61N50 vs IXFN100N20

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