Transistors
IXSH30N60C
IXYS Corporation
Description: Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

Overview of IXSH30N60C by IXYS Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

CAD Models for IXSH30N60C by IXYS Corporation
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Part Data Attributes for IXSH30N60C by IXYS Corporation

IXSH30N60C
IXYS Corporation
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
IXYS CORP
Part Package Code
TO-247AD
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
HIGH SPEED
Case Connection
COLLECTOR
Collector Current-Max (IC)
55 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE
Fall Time-Max (tf)
120 ns
Gate-Emitter Thr Voltage-Max
7 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-247AD
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
200 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
290 ns
Turn-on Time-Nom (ton)
70 ns
Want to compare parts?
  1. IXSH30N60C
    IXYS Corporation
    Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
    VS

Alternate Parts for IXSH30N60C

This table gives cross-reference parts and alternative options found for IXSH30N60C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXSH30N60C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IXSH30N60C vs SGP13N60UF
IXGH25N100U1 Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc IXSH30N60C vs IXGH25N100U1
HGTG40N60B3_NL Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation IXSH30N60C vs HGTG40N60B3_NL
IRG4PC30FPBF Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 Infineon Technologies AG IXSH30N60C vs IRG4PC30FPBF
IRGPS40B120U Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN International Rectifier IXSH30N60C vs IRGPS40B120U
HGTP15N50C1 Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel, TO-220AB Harris Semiconductor IXSH30N60C vs HGTP15N50C1
IRG4BC30U-SPBF Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IXSH30N60C vs IRG4BC30U-SPBF
IXGH32N60B Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IXSH30N60C vs IXGH32N60B
IRG4BC15UD-SPBF Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IXSH30N60C vs IRG4BC15UD-SPBF
HGTP6N50E1D Insulated Gate Bipolar Transistor, 7.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation IXSH30N60C vs HGTP6N50E1D

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