Part Details for IXFP6N120P by IXYS Corporation
Overview of IXFP6N120P by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXFP6N120P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IXFP6N120P-ND
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DigiKey | MOSFET N-CH 1200V 6A TO220AB Min Qty: 1 Lead time: 57 Weeks Container: Tube |
166 In Stock |
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$5.5830 / $9.8400 | Buy Now |
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DISTI #
747-IXFP6N120P
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Mouser Electronics | MOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A RoHS: Compliant | 494 |
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$5.4800 / $9.7500 | Buy Now |
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Future Electronics | N-Channel 1200 V 6 A 2.4 Ω Flange Mount PolarP2 HiPerFET Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Container: Tube | 0Tube |
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$5.7100 / $5.8300 | Buy Now |
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DISTI #
IXFP6N120P
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TTI | MOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$5.4400 / $5.7700 | Buy Now |
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DISTI #
IXFP6N120P
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TME | Transistor: N-MOSFET, unipolar, 1.2kV, 6A, 250W, TO220AB Min Qty: 1 | 58 |
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$6.6100 / $9.2500 | Buy Now |
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LCSC | 1.2kV 6A 2.4500mA10V 250W 5V1mA 1 N-Channel TO-220AB MOSFETs ROHS | 6 |
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$3.8015 / $5.1390 | Buy Now |
Part Details for IXFP6N120P
IXFP6N120P CAD Models
IXFP6N120P Part Data Attributes
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IXFP6N120P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFP6N120P
IXYS Corporation
Power Field-Effect Transistor, 6A I(D), 1200V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-220AB | |
| Package Description | PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.0024 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFP6N120P
This table gives cross-reference parts and alternative options found for IXFP6N120P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFP6N120P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFH6N120P | Power Field-Effect Transistor, 6A I(D), 1200V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | Littelfuse Inc | IXFP6N120P vs IXFH6N120P |
| APT4F120S | Power Field-Effect Transistor, 4A I(D), 1200V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFP6N120P vs APT4F120S |
| IXFA6N120P | Power Field-Effect Transistor, 6A I(D), 1200V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3 | IXYS Corporation | IXFP6N120P vs IXFA6N120P |
| IXFH6N120P | Power Field-Effect Transistor, 6A I(D), 1200V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | IXFP6N120P vs IXFH6N120P |
| IXFP6N120P | Power Field-Effect Transistor, 6A I(D), 1200V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | Littelfuse Inc | IXFP6N120P vs IXFP6N120P |
| APT4M120K | Power Field-Effect Transistor, 5A I(D), 1200V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Microsemi Corporation | IXFP6N120P vs APT4M120K |
| APT4F120K | Power Field-Effect Transistor, 4A I(D), 1200V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Microchip Technology Inc | IXFP6N120P vs APT4F120K |
| IXFA6N120P | Power Field-Effect Transistor, 6A I(D), 1200V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3 | Littelfuse Inc | IXFP6N120P vs IXFA6N120P |