Part Details for IXFN40N110P by IXYS Corporation
Overview of IXFN40N110P by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for IXFN40N110P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
IXFN40N110P
|
TME | Module, single transistor, 1.1kV, 34A, SOT227B, screw, Idm: 100A Min Qty: 1 | 1 |
|
$40.4300 / $50.9900 | Buy Now |
Part Details for IXFN40N110P
IXFN40N110P CAD Models
IXFN40N110P Part Data Attributes:
|
|
IXFN40N110P
IXYS Corporation
Buy Now
Datasheet
|
Compare Parts:
IXFN40N110P
IXYS Corporation
Power Field-Effect Transistor, 34A I(D), 1100V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | PLASTIC, MINIBLOC-4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1100 V | |
| Drain Current-Max (ID) | 34 A | |
| Drain-source On Resistance-Max | 0.26 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 890 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFN40N110P
This table gives cross-reference parts and alternative options found for IXFN40N110P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN40N110P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFN40N110P | Power Field-Effect Transistor, 34A I(D), 1100V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | IXFN40N110P vs IXFN40N110P |
| APT10026JNR | 33A, 1000V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET | Microsemi Corporation | IXFN40N110P vs APT10026JNR |
| APT10025JLC | Power Field-Effect Transistor, 34A I(D), 1000V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | IXFN40N110P vs APT10025JLC |
| IXFE36N100 | Power Field-Effect Transistor, 33A I(D), 1000V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXYS Corporation | IXFN40N110P vs IXFE36N100 |
| APT10025JFLC | Power Field-Effect Transistor, 34A I(D), 1000V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | IXFN40N110P vs APT10025JFLC |
| IXFN36N110P | Power Field-Effect Transistor, 36A I(D), 1100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | IXYS Corporation | IXFN40N110P vs IXFN36N110P |
| APT10026JNR | Power Field-Effect Transistor, 33A I(D), 1000V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Advanced Power Technology | IXFN40N110P vs APT10026JNR |