Part Details for IXFE36N100 by IXYS Corporation
Overview of IXFE36N100 by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IXFE36N100
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXFE36N100
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Mouser Electronics | Discrete Semiconductor Modules 33 Amps 1000V 0.24 Rds RoHS: Compliant | 0 |
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Part Details for IXFE36N100
IXFE36N100 CAD Models
IXFE36N100 Part Data Attributes:
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IXFE36N100
IXYS Corporation
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Datasheet
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IXFE36N100
IXYS Corporation
Power Field-Effect Transistor, 33A I(D), 1000V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | FLANGE MOUNT, R-PUFM-X4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 4000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.24 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 580 W | |
| Pulsed Drain Current-Max (IDM) | 144 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFE36N100
This table gives cross-reference parts and alternative options found for IXFE36N100. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFE36N100, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFN40N110P | Power Field-Effect Transistor, 34A I(D), 1100V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | IXFE36N100 vs IXFN40N110P |
| APT10026JNR | 33A, 1000V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET | Microsemi Corporation | IXFE36N100 vs APT10026JNR |
| APT10025JLC | Power Field-Effect Transistor, 34A I(D), 1000V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | IXFE36N100 vs APT10025JLC |
| IXFN40N110P | Power Field-Effect Transistor, 34A I(D), 1100V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | IXYS Corporation | IXFE36N100 vs IXFN40N110P |
| APT10025JFLC | Power Field-Effect Transistor, 34A I(D), 1000V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | IXFE36N100 vs APT10025JFLC |
| IXFN36N110P | Power Field-Effect Transistor, 36A I(D), 1100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | IXYS Corporation | IXFE36N100 vs IXFN36N110P |
| APT10026JNR | Power Field-Effect Transistor, 33A I(D), 1000V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Advanced Power Technology | IXFE36N100 vs APT10026JNR |