Part Details for IS43R83200B-5TL by Integrated Silicon Solution Inc
Overview of IS43R83200B-5TL by Integrated Silicon Solution Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Part Details for IS43R83200B-5TL
IS43R83200B-5TL CAD Models
IS43R83200B-5TL Part Data Attributes
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IS43R83200B-5TL
Integrated Silicon Solution Inc
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Datasheet
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IS43R83200B-5TL
Integrated Silicon Solution Inc
DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSSOP66,.46 | |
| Pin Count | 66 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 200 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| JESD-609 Code | e3 | |
| Length | 22.22 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.03 A | |
| Supply Current-Max | 0.29 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Width | 10.16 mm |
Alternate Parts for IS43R83200B-5TL
This table gives cross-reference parts and alternative options found for IS43R83200B-5TL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS43R83200B-5TL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| V58C2256804SALD-6 | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, DIE-STACKED, TSOP2-66 | ProMOS Technologies Inc | IS43R83200B-5TL vs V58C2256804SALD-6 |
| MT46V32M8P-6RH | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | IS43R83200B-5TL vs MT46V32M8P-6RH |
| HYB25D256800BEL-6 | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Infineon Technologies AG | IS43R83200B-5TL vs HYB25D256800BEL-6 |
| K4H560838J-LLB3T | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | IS43R83200B-5TL vs K4H560838J-LLB3T |
| EDD2508AKTA-6BLI-E | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Elpida Memory Inc | IS43R83200B-5TL vs EDD2508AKTA-6BLI-E |
| HYB25DC256803CE-6 | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 | Qimonda AG | IS43R83200B-5TL vs HYB25DC256803CE-6 |
| MT46V32M8TG-6TES:C | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | IS43R83200B-5TL vs MT46V32M8TG-6TES:C |
| EDD2508AMTA-6B | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Elpida Memory Inc | IS43R83200B-5TL vs EDD2508AMTA-6B |
| MT46V32M8TG-6TITH | 32MX8 DDR DRAM, 0.7ns, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | IS43R83200B-5TL vs MT46V32M8TG-6TITH |
| MT46V32M8P-6TH | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | IS43R83200B-5TL vs MT46V32M8P-6TH |