Part Details for K4H560838J-LLB3T by Samsung Semiconductor
Overview of K4H560838J-LLB3T by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for K4H560838J-LLB3T
K4H560838J-LLB3T CAD Models
K4H560838J-LLB3T Part Data Attributes
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K4H560838J-LLB3T
Samsung Semiconductor
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Datasheet
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K4H560838J-LLB3T
Samsung Semiconductor
DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSSOP66,.46 | |
Pin Count | 66 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.24 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.7 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 166 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 2,4,8 | |
JESD-30 Code | R-PDSO-G66 | |
Length | 22.22 mm | |
Memory Density | 268435456 bit | |
Memory IC Type | DDR1 DRAM | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 66 | |
Number of Words | 33554432 words | |
Number of Words Code | 32000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 32MX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSSOP66,.46 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 2,4,8 | |
Standby Current-Max | 0.003 A | |
Supply Current-Max | 0.27 mA | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.65 mm | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 10.16 mm |
Alternate Parts for K4H560838J-LLB3T
This table gives cross-reference parts and alternative options found for K4H560838J-LLB3T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H560838J-LLB3T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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V58C2256804SALD-6 | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, DIE-STACKED, TSOP2-66 | ProMOS Technologies Inc | K4H560838J-LLB3T vs V58C2256804SALD-6 |
MT46V32M8P-6RH | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H560838J-LLB3T vs MT46V32M8P-6RH |
HYB25D256800BEL-6 | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Infineon Technologies AG | K4H560838J-LLB3T vs HYB25D256800BEL-6 |
EDD2508AKTA-6BLI-E | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Elpida Memory Inc | K4H560838J-LLB3T vs EDD2508AKTA-6BLI-E |
HYB25DC256803CE-6 | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 | Qimonda AG | K4H560838J-LLB3T vs HYB25DC256803CE-6 |
MT46V32M8TG-6TES:C | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H560838J-LLB3T vs MT46V32M8TG-6TES:C |
EDD2508AMTA-6B | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Elpida Memory Inc | K4H560838J-LLB3T vs EDD2508AMTA-6B |
MT46V32M8TG-6TITH | 32MX8 DDR DRAM, 0.7ns, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H560838J-LLB3T vs MT46V32M8TG-6TITH |
MT46V32M8P-6TH | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H560838J-LLB3T vs MT46V32M8P-6TH |
V58C2256804SCLT6I | DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | K4H560838J-LLB3T vs V58C2256804SCLT6I |