Part Details for IS43R16160B-5TL by Integrated Silicon Solution Inc
Overview of IS43R16160B-5TL by Integrated Silicon Solution Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Entertainment and Gaming
Price & Stock for IS43R16160B-5TL
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 9 |
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RFQ |
Part Details for IS43R16160B-5TL
IS43R16160B-5TL CAD Models
IS43R16160B-5TL Part Data Attributes
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IS43R16160B-5TL
Integrated Silicon Solution Inc
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Datasheet
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IS43R16160B-5TL
Integrated Silicon Solution Inc
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSSOP66,.46 | |
Pin Count | 66 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.24 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.7 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 200 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 2,4,8 | |
JESD-30 Code | R-PDSO-G66 | |
JESD-609 Code | e3 | |
Length | 22.22 mm | |
Memory Density | 268435456 bit | |
Memory IC Type | DDR1 DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 66 | |
Number of Words | 16777216 words | |
Number of Words Code | 16000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 16MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSSOP66,.46 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Peak Reflow Temperature (Cel) | 260 | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 2,4,8 | |
Standby Current-Max | 0.03 A | |
Supply Current-Max | 0.29 mA | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.65 mm | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Width | 10.16 mm |
Alternate Parts for IS43R16160B-5TL
This table gives cross-reference parts and alternative options found for IS43R16160B-5TL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS43R16160B-5TL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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V58C2256164SALN-5 | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, DIE-STACKED, TSOP2-66 | ProMOS Technologies Inc | IS43R16160B-5TL vs V58C2256164SALN-5 |
K4H561638J-LLCCT | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | IS43R16160B-5TL vs K4H561638J-LLCCT |
V58C2256164SALI-5B | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | IS43R16160B-5TL vs V58C2256164SALI-5B |
V58C2256164SALD-5B | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, DIE-STACKED, TSOP2-66 | ProMOS Technologies Inc | IS43R16160B-5TL vs V58C2256164SALD-5B |
HY5DU561622FLTP-D5 | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | SK Hynix Inc | IS43R16160B-5TL vs HY5DU561622FLTP-D5 |
N2DS25616CS-5T | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 INCH, GREEN, PLASTIC, TSOP2-66 | Nanya Technology Corporation | IS43R16160B-5TL vs N2DS25616CS-5T |
HYB25D256163CE-5 | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 | Qimonda AG | IS43R16160B-5TL vs HYB25D256163CE-5 |
V58C2256164SBLE5 | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, LEAD FREE, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | IS43R16160B-5TL vs V58C2256164SBLE5 |
K4D551638D-TC50 | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | IS43R16160B-5TL vs K4D551638D-TC50 |
K4H561638D-TCCC0 | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | IS43R16160B-5TL vs K4H561638D-TCCC0 |