Part Details for IS41LV16100-50TE by Integrated Silicon Solution Inc
Overview of IS41LV16100-50TE by Integrated Silicon Solution Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
D12350TE10IV | Renesas Electronics Corporation | Microcontrollers for General Purpose System Control Applications (Non Promotion) | |
D12350TE20V | Renesas Electronics Corporation | Microcontrollers for General Purpose System Control Applications (Non Promotion) | |
UPA1950TE(0)-T1-AT | Renesas Electronics Corporation | Power MOSFETs for Automotive |
Part Details for IS41LV16100-50TE
IS41LV16100-50TE CAD Models
IS41LV16100-50TE Part Data Attributes
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IS41LV16100-50TE
Integrated Silicon Solution Inc
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Datasheet
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IS41LV16100-50TE
Integrated Silicon Solution Inc
EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
Part Package Code | TSOP2 | |
Package Description | 0.400 INCH, TSOP2-50/44 | |
Pin Count | 50 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FAST PAGE WITH EDO | |
Access Time-Max | 50 ns | |
Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | |
I/O Type | COMMON | |
JESD-30 Code | R-PDSO-G44 | |
JESD-609 Code | e0 | |
Length | 20.95 mm | |
Memory Density | 16777216 bit | |
Memory IC Type | EDO DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 44 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -30 °C | |
Organization | 1MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP44/50,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 1024 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Standby Current-Max | 0.002 A | |
Supply Current-Max | 0.16 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for IS41LV16100-50TE
This table gives cross-reference parts and alternative options found for IS41LV16100-50TE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS41LV16100-50TE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
K4E171612C-TL50 | EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44 | Samsung Semiconductor | IS41LV16100-50TE vs K4E171612C-TL50 |
KM416V1204CT-L5 | EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44 | Samsung Semiconductor | IS41LV16100-50TE vs KM416V1204CT-L5 |
GM71VS16163CT-5 | EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, | LG Semicon Co Ltd | IS41LV16100-50TE vs GM71VS16163CT-5 |
M5M4V16165CTP-5T | EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50/44 | Mitsubishi Electric | IS41LV16100-50TE vs M5M4V16165CTP-5T |
M5M4V16165CTP-5ST | EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50/44 | Mitsubishi Electric | IS41LV16100-50TE vs M5M4V16165CTP-5ST |
MSM51V18165DSL-50TS-K | EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50/44 | OKI Electric Industry Co Ltd | IS41LV16100-50TE vs MSM51V18165DSL-50TS-K |
AS4LC1M16E5-50TC | EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44 | Alliance Semiconductor Corporation | IS41LV16100-50TE vs AS4LC1M16E5-50TC |
GM71V18163CLT-5 | EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44 | SK Hynix Inc | IS41LV16100-50TE vs GM71V18163CLT-5 |
K4E151612C-TC50 | EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44 | Samsung Semiconductor | IS41LV16100-50TE vs K4E151612C-TC50 |
IBM0118165PT3-50 | EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 X 0.825 INCH, TSOP2-50/44 | IBM | IS41LV16100-50TE vs IBM0118165PT3-50 |