Part Details for IRLR2705TRPBF by Infineon Technologies AG
Overview of IRLR2705TRPBF by Infineon Technologies AG
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRLR2705TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86AK5414
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Newark | Mosfet, N-Ch, 55V, 28A, To-252Aa Rohs Compliant: Yes |Infineon IRLR2705TRPBF Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.3140 / $0.3460 | Buy Now |
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DISTI #
IRLR2705PBFCT-ND
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DigiKey | MOSFET N-CH 55V 28A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
11169 In Stock |
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$0.2603 / $0.7800 | Buy Now |
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DISTI #
IRLR2705TRPBF
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Avnet Americas | Trans MOSFET N-CH 55V 28A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR2705TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.2319 / $0.2835 | Buy Now |
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DISTI #
942-IRLR2705TRPBF
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Mouser Electronics | MOSFET 55V 1 N-CH HEXFET 40mOhms 16.7nC RoHS: Compliant | 38958 |
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$0.2570 / $0.7800 | Buy Now |
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DISTI #
70017833
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RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.04Ohm, ID 28A, D-Pak (TO-252AA),PD 68W,-55C | Infineon IRLR2705TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$0.6700 / $0.8300 | RFQ |
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Future Electronics | Single N-Channel 55 V 40 mOhm 25 nC HEXFET® Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks Container: Reel | 58000Reel |
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$0.2350 / $0.2550 | Buy Now |
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Future Electronics | Single N-Channel 55 V 40 mOhm 25 nC HEXFET® Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks Container: Reel | 16000Reel |
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$0.1310 / $0.1430 | Buy Now |
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DISTI #
69263798
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Verical | Trans MOSFET N-CH Si 55V 28A 3-Pin(2+Tab) DPAK T/R Min Qty: 109 Package Multiple: 1 Date Code: 2231 | Americas - 4885 |
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$0.2375 / $0.2888 | Buy Now |
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DISTI #
IRLR2705TRPBF
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TME | Transistor: N-MOSFET, unipolar, 55V, 28A, 68W, DPAK Min Qty: 1 | 2095 |
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$0.3730 / $0.7510 | Buy Now |
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Ameya Holding Limited | Min Qty: 2000 | 300 |
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$0.3505 / $0.3633 | Buy Now |
Part Details for IRLR2705TRPBF
IRLR2705TRPBF CAD Models
IRLR2705TRPBF Part Data Attributes
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IRLR2705TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLR2705TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 110 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.051 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 68 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLR2705TRPBF
This table gives cross-reference parts and alternative options found for IRLR2705TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR2705TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLR2705TRLPBF | Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR2705TRPBF vs IRLR2705TRLPBF |
| IRLR2705TRPBF | Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRLR2705TRPBF vs IRLR2705TRPBF |
| IRLR2705TRR | Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR2705TRPBF vs IRLR2705TRR |
| IRLR2705TRLPBF | Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRLR2705TRPBF vs IRLR2705TRLPBF |
| IRLR2705TRL | Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR2705TRPBF vs IRLR2705TRL |
| IRLR2705PBF | Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR2705TRPBF vs IRLR2705PBF |
| IRLR2705 | Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | IRLR2705TRPBF vs IRLR2705 |
| IRLR2705TR | Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR2705TRPBF vs IRLR2705TR |
| IRLR2705PBF | Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRLR2705TRPBF vs IRLR2705PBF |