Part Details for IRHNA9160PBF by Infineon Technologies AG
Overview of IRHNA9160PBF by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for IRHNA9160PBF
IRHNA9160PBF CAD Models
IRHNA9160PBF Part Data Attributes
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IRHNA9160PBF
Infineon Technologies AG
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Datasheet
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IRHNA9160PBF
Infineon Technologies AG
Power Field-Effect Transistor, 38A I(D), 100V, 0.071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | CHIP CARRIER, R-CBCC-N3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 38 A | |
| Drain-source On Resistance-Max | 0.071 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CBCC-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 152 A | |
| Reference Standard | RH - 100K Rad(Si) | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 380 ns | |
| Turn-on Time-Max (ton) | 205 ns |
Alternate Parts for IRHNA9160PBF
This table gives cross-reference parts and alternative options found for IRHNA9160PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHNA9160PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| JANSF2N7425U | Power Field-Effect Transistor, 38A I(D), 100V, 0.071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN | International Rectifier | IRHNA9160PBF vs JANSF2N7425U |
| IRHNA93160PBF | Power Field-Effect Transistor, 38A I(D), 100V, 0.071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN | International Rectifier | IRHNA9160PBF vs IRHNA93160PBF |
| IRHNA9160 | Power Field-Effect Transistor, 38A I(D), 100V, 0.071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN | Infineon Technologies AG | IRHNA9160PBF vs IRHNA9160 |
| JANSF2N7425U | Power Field-Effect Transistor, 38A I(D), 100V, 0.071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN | Infineon Technologies AG | IRHNA9160PBF vs JANSF2N7425U |
| JANSR2N7425U | Power Field-Effect Transistor, 38A I(D), 100V, 0.071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN | Infineon Technologies AG | IRHNA9160PBF vs JANSR2N7425U |