IRHNA9160PBF vs IRHNA93160PBF feature comparison

IRHNA9160PBF Infineon Technologies AG

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IRHNA93160PBF International Rectifier

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INTERNATIONAL RECTIFIER CORP
Package Description CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 500 mJ 500 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 38 A 38 A
Drain-source On Resistance-Max 0.071 Ω 0.071 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CBCC-N3 R-CBCC-N3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 152 A 152 A
Reference Standard RH - 100K Rad(Si)
Surface Mount YES YES
Terminal Form NO LEAD NO LEAD
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 40
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 380 ns
Turn-on Time-Max (ton) 205 ns
Base Number Matches 1 1
Pbfree Code Yes
Pin Count 3
Additional Feature HIGH RELIABILITY
Qualification Status Not Qualified

Compare IRHNA9160PBF with alternatives

Compare IRHNA93160PBF with alternatives