IRHNA9160PBF
vs
IRHNA93160PBF
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INTERNATIONAL RECTIFIER CORP
|
Package Description |
CHIP CARRIER, R-CBCC-N3
|
CHIP CARRIER, R-CBCC-N3
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Infineon
|
|
Avalanche Energy Rating (Eas) |
500 mJ
|
500 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
38 A
|
38 A
|
Drain-source On Resistance-Max |
0.071 Ω
|
0.071 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-CBCC-N3
|
R-CBCC-N3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
300 W
|
|
Pulsed Drain Current-Max (IDM) |
152 A
|
152 A
|
Reference Standard |
RH - 100K Rad(Si)
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
40
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
380 ns
|
|
Turn-on Time-Max (ton) |
205 ns
|
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Pin Count |
|
3
|
Additional Feature |
|
HIGH RELIABILITY
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare IRHNA9160PBF with alternatives
Compare IRHNA93160PBF with alternatives