There are no models available for this part yet.
Overview of IRHF7110PBF by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 2 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 3 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Security and Surveillance
Environmental Monitoring
Internet of Things (IoT)
Industrial Automation
Healthcare
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Robotics and Drones
CAD Models for IRHF7110PBF by International Rectifier
Part Data Attributes for IRHF7110PBF by International Rectifier
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
INTERNATIONAL RECTIFIER CORP
|
|
Part Package Code
|
BCY
|
|
Package Description
|
CYLINDRICAL, O-MBCY-W3
|
|
Pin Count
|
2
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.29.00.95
|
|
Additional Feature
|
RADIATION HARDENED
|
|
Avalanche Energy Rating (Eas)
|
68 mJ
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
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|
DS Breakdown Voltage-Min
|
100 V
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|
Drain Current-Max (ID)
|
3.5 A
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Drain-source On Resistance-Max
|
0.69 Ω
|
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-205AF
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JESD-30 Code
|
O-MBCY-W3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
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|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
METAL
|
|
Package Shape
|
ROUND
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Package Style
|
CYLINDRICAL
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation Ambient-Max
|
15 W
|
|
Pulsed Drain Current-Max (IDM)
|
14 A
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Qualification Status
|
Not Qualified
|
|
Surface Mount
|
NO
|
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Terminal Form
|
WIRE
|
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Terminal Position
|
BOTTOM
|
|
Time@Peak Reflow Temperature-Max (s)
|
40
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
|
Turn-off Time-Max (toff)
|
80 ns
|
|
Turn-on Time-Max (ton)
|
45 ns
|
Alternate Parts for IRHF7110PBF
This table gives cross-reference parts and alternative options found for IRHF7110PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHF7110PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRHF7110 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN | International Rectifier | IRHF7110PBF vs IRHF7110 |
| IRHF7110 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN | Infineon Technologies AG | IRHF7110PBF vs IRHF7110 |