There are no models available for this part yet.
Overview of IRHF8110 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 3 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 2 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRHF8110 by Infineon Technologies AG
Part Data Attributes for IRHF8110 by Infineon Technologies AG
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|
|
|---|---|
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Rohs Code
|
No
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Part Life Cycle Code
|
Obsolete
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|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
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Package Description
|
TO-39, 3 PIN
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Reach Compliance Code
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not_compliant
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ECCN Code
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EAR99
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Additional Feature
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RADIATION HARDENED
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Avalanche Energy Rating (Eas)
|
68 mJ
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
|
100 V
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Drain Current-Max (ID)
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3.5 A
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Drain-source On Resistance-Max
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0.69 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-205AF
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JESD-30 Code
|
O-MBCY-W3
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JESD-609 Code
|
e0
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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METAL
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Package Shape
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ROUND
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Package Style
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CYLINDRICAL
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
|
15 W
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Pulsed Drain Current-Max (IDM)
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14 A
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Finish
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TIN LEAD
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Terminal Form
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WIRE
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Terminal Position
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BOTTOM
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Transistor Application
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SWITCHING
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Transistor Element Material
|
SILICON
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Alternate Parts for IRHF8110
This table gives cross-reference parts and alternative options found for IRHF8110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHF8110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRHF7110 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN | International Rectifier | IRHF8110 vs IRHF7110 |
| IRHF7110PBF | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN | International Rectifier | IRHF8110 vs IRHF7110PBF |
| IRHF7110 | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN | Infineon Technologies AG | IRHF8110 vs IRHF7110 |