Part Details for IRGSL6B60KDPBF by Infineon Technologies AG
Overview of IRGSL6B60KDPBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for IRGSL6B60KDPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRGSL6B60KDPBF
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Avnet Americas | Trans IGBT Chip N-CH 600V 18A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IRGSL6B60KDPBF) Min Qty: 324 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 229 Partner Stock |
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$0.9808 / $1.1044 | Buy Now |
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DISTI #
70018514
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RS | 600V Ultrafast 10-30 kHz COPACK IGBT In a TO-262 Package | Infineon IRGSL6B60KDPBF RoHS: Not Compliant Min Qty: 250 Package Multiple: 1 Container: Bulk | 0 |
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$2.2400 / $2.8000 | RFQ |
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Rochester Electronics | IRGSL6B60 - Discrete IGBT with Anti-Parallel Diode ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 229 |
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$0.9574 / $1.1300 | Buy Now |
Part Details for IRGSL6B60KDPBF
IRGSL6B60KDPBF CAD Models
IRGSL6B60KDPBF Part Data Attributes
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IRGSL6B60KDPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRGSL6B60KDPBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | LEAD FREE, PLASTIC PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 13 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 27 ns | |
| Gate-Emitter Thr Voltage-Max | 5.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-262 | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 90 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 26 ns | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 258 ns | |
| Turn-on Time-Nom (ton) | 45 ns |
Alternate Parts for IRGSL6B60KDPBF
This table gives cross-reference parts and alternative options found for IRGSL6B60KDPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGSL6B60KDPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRGSL6B60KD | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRGSL6B60KDPBF vs IRGSL6B60KD |
| IRGSL6B60KDPBF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | IRGSL6B60KDPBF vs IRGSL6B60KDPBF |
| IRGSL6B60KDTRL | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262AA, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRGSL6B60KDPBF vs IRGSL6B60KDTRL |
| IRGSL6B60KDTRL | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3 PIN | International Rectifier | IRGSL6B60KDPBF vs IRGSL6B60KDTRL |
| IRGSL6B60KD | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262, PLASTIC PACKAGE-3 | International Rectifier | IRGSL6B60KDPBF vs IRGSL6B60KD |
| IRGSL6B60KDTRR | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3 PIN | International Rectifier | IRGSL6B60KDPBF vs IRGSL6B60KDTRR |