Transistors
IRGSL6B60KD
Description: Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262, PLASTIC PACKAGE-3

Overview of IRGSL6B60KD by International Rectifier

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Where used in Applications: Industrial Automation Electronic Manufacturing

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Part Data Attributes for IRGSL6B60KD by International Rectifier

IRGSL6B60KD
International Rectifier
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
TO-262
Package Description
IN-LINE, R-PSIP-T3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Case Connection
COLLECTOR
Collector Current-Max (IC)
13 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf)
27 ns
Gate-Emitter Thr Voltage-Max
5.5 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-262
JESD-30 Code
R-PSIP-T3
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
90 W
Qualification Status
Not Qualified
Rise Time-Max (tr)
26 ns
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
MOTOR CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
258 ns
Turn-on Time-Nom (ton)
45 ns
Want to compare parts?
  1. IRGSL6B60KD
    International Rectifier
    Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262, PLASTIC PACKAGE-3
    VS

Alternate Parts for IRGSL6B60KD

This table gives cross-reference parts and alternative options found for IRGSL6B60KD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGSL6B60KD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRGSL6B60KD Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262, PLASTIC PACKAGE-3 Infineon Technologies AG IRGSL6B60KD vs IRGSL6B60KD
IRGSL6B60KDPBF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRGSL6B60KD vs IRGSL6B60KDPBF
IRGSL6B60KDTRLPBF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262AA, LEAD FREE PACKAGE-3 International Rectifier IRGSL6B60KD vs IRGSL6B60KDTRLPBF
IRGSL6B60KDTRR Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3 PIN International Rectifier IRGSL6B60KD vs IRGSL6B60KDTRR
IRGSL6B60KDTRL Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262AA, LEAD FREE PACKAGE-3 Infineon Technologies AG IRGSL6B60KD vs IRGSL6B60KDTRL
IRGSL6B60KDTRL Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3 PIN International Rectifier IRGSL6B60KD vs IRGSL6B60KDTRL
Part Number Description Manufacturer Compare
IRGSL6B60KDTRR Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3 PIN International Rectifier IRGSL6B60KD vs IRGSL6B60KDTRR
IRGSL6B60KDTRLPBF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262AA, LEAD FREE PACKAGE-3 International Rectifier IRGSL6B60KD vs IRGSL6B60KDTRLPBF
IRGSL6B60KDTRRPBF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262AA, LEAD FREE PACKAGE-3 International Rectifier IRGSL6B60KD vs IRGSL6B60KDTRRPBF
IRGSL6B60KDPBF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRGSL6B60KD vs IRGSL6B60KDPBF
IRGSL6B60KDTRL Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3 PIN International Rectifier IRGSL6B60KD vs IRGSL6B60KDTRL
IRGSL6B60KD Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-262, PLASTIC PACKAGE-3 Infineon Technologies AG IRGSL6B60KD vs IRGSL6B60KD

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