Datasheets
IRGR3B60KD2TRLPBF by:

Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3

Part Details for IRGR3B60KD2TRLPBF by International Rectifier

Overview of IRGR3B60KD2TRLPBF by International Rectifier

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Applications Energy and Power Systems Renewable Energy

Part Details for IRGR3B60KD2TRLPBF

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IRGR3B60KD2TRLPBF Part Data Attributes

IRGR3B60KD2TRLPBF International Rectifier
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IRGR3B60KD2TRLPBF International Rectifier Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-252AA
Package Description LEAD FREE, DPAK-3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 7.8 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 105 ns
Gate-Emitter Thr Voltage-Max 5.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 52 W
Qualification Status Not Qualified
Rise Time-Max (tr) 22 ns
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 211 ns
Turn-on Time-Nom (ton) 35 ns

Alternate Parts for IRGR3B60KD2TRLPBF

This table gives cross-reference parts and alternative options found for IRGR3B60KD2TRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGR3B60KD2TRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRGR3B60KD2 Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 Infineon Technologies AG IRGR3B60KD2TRLPBF vs IRGR3B60KD2
IRGR3B60KD2TRRPBF Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRGR3B60KD2TRLPBF vs IRGR3B60KD2TRRPBF
IRGR3B60KD2TRL Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRGR3B60KD2TRLPBF vs IRGR3B60KD2TRL
IRGR3B60KD2TRR Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRGR3B60KD2TRLPBF vs IRGR3B60KD2TRR
IRGR3B60KD2TRPBF Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRGR3B60KD2TRLPBF vs IRGR3B60KD2TRPBF
IRGR3B60KD2TR Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRGR3B60KD2TRLPBF vs IRGR3B60KD2TR
IRGR3B60KD2TRLPBF Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRGR3B60KD2TRLPBF vs IRGR3B60KD2TRLPBF
IRGR3B60KD2TRPBF Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRGR3B60KD2TRLPBF vs IRGR3B60KD2TRPBF
Part Number Description Manufacturer Compare
IRGR3B60KD2TRLPBF Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRGR3B60KD2TRLPBF vs IRGR3B60KD2TRLPBF
IRGR3B60KD2TRR Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRGR3B60KD2TRLPBF vs IRGR3B60KD2TRR
IRGR3B60KD2TRL Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRGR3B60KD2TRLPBF vs IRGR3B60KD2TRL
IRGR3B60KD2TRPBF Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRGR3B60KD2TRLPBF vs IRGR3B60KD2TRPBF
IRGR3B60KD2TRRPBF Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRGR3B60KD2TRLPBF vs IRGR3B60KD2TRRPBF
IRGR3B60KD2TRRPBF Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRGR3B60KD2TRLPBF vs IRGR3B60KD2TRRPBF
IRGR3B60KD2TR Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRGR3B60KD2TRLPBF vs IRGR3B60KD2TR
IRGR3B60KD2TRPBF Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRGR3B60KD2TRLPBF vs IRGR3B60KD2TRPBF

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