Part Details for IRGR3B60KD2TRRPBF by International Rectifier
Overview of IRGR3B60KD2TRRPBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IRGR3B60KD2TRRPBF
IRGR3B60KD2TRRPBF CAD Models
IRGR3B60KD2TRRPBF Part Data Attributes
|
IRGR3B60KD2TRRPBF
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
IRGR3B60KD2TRRPBF
International Rectifier
Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-252AA | |
Package Description | LEAD FREE, DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 7.8 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 105 ns | |
Gate-Emitter Thr Voltage-Max | 5.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 52 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 22 ns | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 211 ns | |
Turn-on Time-Nom (ton) | 35 ns |
Alternate Parts for IRGR3B60KD2TRRPBF
This table gives cross-reference parts and alternative options found for IRGR3B60KD2TRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGR3B60KD2TRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRGR3B60KD2 | Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | Infineon Technologies AG | IRGR3B60KD2TRRPBF vs IRGR3B60KD2 |
IRGR3B60KD2TRRPBF | Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRGR3B60KD2TRRPBF vs IRGR3B60KD2TRRPBF |
IRGR3B60KD2TRL | Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | International Rectifier | IRGR3B60KD2TRRPBF vs IRGR3B60KD2TRL |
IRGR3B60KD2TRR | Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | International Rectifier | IRGR3B60KD2TRRPBF vs IRGR3B60KD2TRR |
IRGR3B60KD2TRPBF | Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRGR3B60KD2TRRPBF vs IRGR3B60KD2TRPBF |
IRGR3B60KD2TR | Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | International Rectifier | IRGR3B60KD2TRRPBF vs IRGR3B60KD2TR |
IRGR3B60KD2TRLPBF | Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRGR3B60KD2TRRPBF vs IRGR3B60KD2TRLPBF |
IRGR3B60KD2TRPBF | Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRGR3B60KD2TRRPBF vs IRGR3B60KD2TRPBF |