Transistors
IRGR3B60KD2
Description: Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3

Overview of IRGR3B60KD2 by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Renewable Energy

Price & Stock for IRGR3B60KD2 by International Rectifier

Part # Manufacturer Description Stock Price Buy
Quest Components   40
  • 1 $2.9836
  • 12 $1.8648
  • 41 $1.6410
$1.6410 / $2.9836 Buy Now

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Part Data Attributes for IRGR3B60KD2 by International Rectifier

IRGR3B60KD2
International Rectifier
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
TO-252AA
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Collector Current-Max (IC)
7.8 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf)
105 ns
Gate-Emitter Thr Voltage-Max
5.5 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
240
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
52 W
Qualification Status
Not Qualified
Rise Time-Max (tr)
22 ns
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
MOTOR CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
211 ns
Turn-on Time-Nom (ton)
35 ns
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  1. IRGR3B60KD2
    International Rectifier
    Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3
    VS

Alternate Parts for IRGR3B60KD2

This table gives cross-reference parts and alternative options found for IRGR3B60KD2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGR3B60KD2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRGR3B60KD2PBF Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRGR3B60KD2 vs IRGR3B60KD2PBF
IRGR3B60KD2PBF Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRGR3B60KD2 vs IRGR3B60KD2PBF
IRGR3B60KD2 Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 Infineon Technologies AG IRGR3B60KD2 vs IRGR3B60KD2
IRGR3B60KD2TRLPBF Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRGR3B60KD2 vs IRGR3B60KD2TRLPBF
IRGR3B60KD2TRLPBF Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRGR3B60KD2 vs IRGR3B60KD2TRLPBF
IRGR3B60KD2TRR Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRGR3B60KD2 vs IRGR3B60KD2TRR
IRGR3B60KD2TRL Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRGR3B60KD2 vs IRGR3B60KD2TRL
Part Number Description Manufacturer Compare
IRGR3B60KD2PBF Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRGR3B60KD2 vs IRGR3B60KD2PBF
IRGR3B60KD2TRLPBF Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRGR3B60KD2 vs IRGR3B60KD2TRLPBF
IRGR3B60KD2TRR Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRGR3B60KD2 vs IRGR3B60KD2TRR
IRGR3B60KD2TRL Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRGR3B60KD2 vs IRGR3B60KD2TRL
IRGR3B60KD2PBF Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRGR3B60KD2 vs IRGR3B60KD2PBF
IRGR3B60KD2TRPBF Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRGR3B60KD2 vs IRGR3B60KD2TRPBF
IRGR3B60KD2TRLPBF Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRGR3B60KD2 vs IRGR3B60KD2TRLPBF

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