Part Details for IRG7PH50K10DPBF by Infineon Technologies AG
Overview of IRG7PH50K10DPBF by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRG7PH50K10DPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRG7PH50K10DPBF
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Avnet Americas | Trans IGBT Chip N-CH 1200V 90A 3-Pin TO-247AC Tube - Rail/Tube (Alt: IRG7PH50K10DPBF) RoHS: Compliant Min Qty: 56 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 4819 Partner Stock |
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$5.6896 / $6.4064 | Buy Now |
Part Details for IRG7PH50K10DPBF
IRG7PH50K10DPBF CAD Models
IRG7PH50K10DPBF Part Data Attributes
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IRG7PH50K10DPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRG7PH50K10DPBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Collector Current-Max (IC) | 90 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Fall Time-Max (tf) | 110 ns | |
Gate-Emitter Thr Voltage-Max | 7.5 V | |
Gate-Emitter Voltage-Max | 30 V | |
Operating Temperature-Max | 150 °C | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 400 W | |
Rise Time-Max (tr) | 80 ns | |
Surface Mount | NO |