Datasheets
IRG4PC30W by:

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN

Part Details for IRG4PC30W by Infineon Technologies AG

Overview of IRG4PC30W by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for IRG4PC30W

Part # Distributor Description Stock Price Buy
DISTI # 995642
Farnell IGBT, TO-247 RoHS: Not Compliant Min Qty: 1 Lead time: 12 Weeks, 1 Days Container: Each 0
  • 1 $6.9551
  • 25 $4.0530
  • 100 $3.1273
$3.1273 / $6.9551 Buy Now

Part Details for IRG4PC30W

IRG4PC30W CAD Models

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IRG4PC30W Part Data Attributes:

IRG4PC30W Infineon Technologies AG
Buy Now Datasheet
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IRG4PC30W Infineon Technologies AG Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-3P, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 23 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 300 ns
Turn-on Time-Nom (ton) 41 ns

Alternate Parts for IRG4PC30W

This table gives cross-reference parts and alternative options found for IRG4PC30W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PC30W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4PC30WPBF Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN International Rectifier IRG4PC30W vs IRG4PC30WPBF
IRG4PC30WPBF Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN Infineon Technologies AG IRG4PC30W vs IRG4PC30WPBF
IRG4PC30W Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier IRG4PC30W vs IRG4PC30W
Part Number Description Manufacturer Compare
APT35GN120SG Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel Microchip Technology Inc IRG4PC30W vs APT35GN120SG
IRGBC40U Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IRG4PC30W vs IRGBC40U
HGTP12N60D1 Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation IRG4PC30W vs HGTP12N60D1
HGTG30N60C3 Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation IRG4PC30W vs HGTG30N60C3
IRGBC40K Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IRG4PC30W vs IRGBC40K
HGT1S12N60B3 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA, PLASTIC PACKAGE-3 Harris Semiconductor IRG4PC30W vs HGT1S12N60B3
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRG4PC30W vs SGP13N60UF
1MB20D-060 Insulated Gate Bipolar Transistor, 38A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN Fuji Electric Co Ltd IRG4PC30W vs 1MB20D-060
IRG4BC20UPBF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRG4PC30W vs IRG4BC20UPBF
GT50J121 TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, 2-21F2C-3, Insulated Gate BIP Transistor Toshiba America Electronic Components IRG4PC30W vs GT50J121

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