Datasheets
IRG4PC30UDPBF by:

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRG4PC30UDPBF by Infineon Technologies AG

Overview of IRG4PC30UDPBF by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for IRG4PC30UDPBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7512
Newark Single Igbt, 600V, 23A, To-247Ac, Continuous Collector Current:23A, Collector Emitter Saturation Voltage:2.52V, Power Dissipation:100W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C, Msl:- Rohs Compliant: Yes |Infineon IRG4PC30UDPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 70017606
RS 600V Ultrafast 8-60 kHz COPACK IGBT IN A TO-247AC Package | Infineon IRG4PC30UDPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $4.3700
  • 5 $4.1500
  • 10 $3.9300
  • 20 $3.7100
  • 100 $3.4900
$3.4900 / $4.3700 RFQ

Part Details for IRG4PC30UDPBF

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IRG4PC30UDPBF Part Data Attributes

IRG4PC30UDPBF Infineon Technologies AG
Buy Now Datasheet
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IRG4PC30UDPBF Infineon Technologies AG Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 1997-04-17
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 23 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 130 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 270 ns
Turn-off Time-Nom (toff) 171 ns
Turn-on Time-Nom (ton) 61 ns
VCEsat-Max 2.1 V

Alternate Parts for IRG4PC30UDPBF

This table gives cross-reference parts and alternative options found for IRG4PC30UDPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PC30UDPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4PC30UD Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier IRG4PC30UDPBF vs IRG4PC30UD
Part Number Description Manufacturer Compare
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRG4PC30UDPBF vs SGP13N60UF
IRGBC40U Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IRG4PC30UDPBF vs IRGBC40U
STGW12NB60HD 24A, 600V, N-CHANNEL IGBT, TO-247, TO-247, 3 PIN STMicroelectronics IRG4PC30UDPBF vs STGW12NB60HD
IRG4BC40W Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRG4PC30UDPBF vs IRG4BC40W
HGTG11N120CND_NL Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation IRG4PC30UDPBF vs HGTG11N120CND_NL
SGP07N120 Insulated Gate Bipolar Transistor, 16.5A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IRG4PC30UDPBF vs SGP07N120
APT30GT60BRD Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Advanced Power Technology IRG4PC30UDPBF vs APT30GT60BRD
IXGH17N100 Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRG4PC30UDPBF vs IXGH17N100
IRG4IBC10UDPBF Insulated Gate Bipolar Transistor, 6.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, FULL PACK-3 Infineon Technologies AG IRG4PC30UDPBF vs IRG4IBC10UDPBF
IRG4BC15MDPBF Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRG4PC30UDPBF vs IRG4BC15MDPBF

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