Part Details for IRG4PC30UDPBF by Infineon Technologies AG
Overview of IRG4PC30UDPBF by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRG4PC30UDPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7512
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Newark | Single Igbt, 600V, 23A, To-247Ac, Continuous Collector Current:23A, Collector Emitter Saturation Voltage:2.52V, Power Dissipation:100W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C, Msl:- Rohs Compliant: Yes |Infineon IRG4PC30UDPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
70017606
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RS | 600V Ultrafast 8-60 kHz COPACK IGBT IN A TO-247AC Package | Infineon IRG4PC30UDPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$3.4900 / $4.3700 | RFQ |
Part Details for IRG4PC30UDPBF
IRG4PC30UDPBF CAD Models
IRG4PC30UDPBF Part Data Attributes
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IRG4PC30UDPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRG4PC30UDPBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 1997-04-17 | |
Samacsys Manufacturer | Infineon | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 23 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 130 ns | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 100 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 270 ns | |
Turn-off Time-Nom (toff) | 171 ns | |
Turn-on Time-Nom (ton) | 61 ns | |
VCEsat-Max | 2.1 V |
Alternate Parts for IRG4PC30UDPBF
This table gives cross-reference parts and alternative options found for IRG4PC30UDPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PC30UDPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRG4PC30UD | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | International Rectifier | IRG4PC30UDPBF vs IRG4PC30UD |