Datasheets
IRG4PC30KDPBF by:

Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRG4PC30KDPBF by Infineon Technologies AG

Overview of IRG4PC30KDPBF by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for IRG4PC30KDPBF

Part # Distributor Description Stock Price Buy
DISTI # 70018454
RS 600V ULTRAFAST 8-25 KHZ COPACK IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC30KDPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $5.0100
  • 5 $4.7600
  • 10 $4.5100
  • 20 $4.2600
$4.2600 / $5.0100 RFQ
Chip1Cloud IGBT 600V 28A 100W TO247AC / Trans IGBT Chip N-CH 600V 28A 100000mW 3-Pin(3+Tab) TO-247AC Tube 8000
RFQ
DISTI # 1688569
Farnell IGBT, W/DIODE, 1200V, 60A, TO247AC RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each 0
  • 1 $1.1673
$1.1673 Buy Now

Part Details for IRG4PC30KDPBF

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IRG4PC30KDPBF Part Data Attributes:

IRG4PC30KDPBF Infineon Technologies AG
Buy Now Datasheet
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IRG4PC30KDPBF Infineon Technologies AG Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 1998-01-01
Samacsys Manufacturer Infineon
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 28 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 120 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 42 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 370 ns
Turn-on Time-Nom (ton) 100 ns

Alternate Parts for IRG4PC30KDPBF

This table gives cross-reference parts and alternative options found for IRG4PC30KDPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PC30KDPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4PC30KD Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IRG4PC30KDPBF vs IRG4PC30KD
IRG4PC30KDPBF Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRG4PC30KDPBF vs IRG4PC30KDPBF
Part Number Description Manufacturer Compare
APT35GN120SG Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel Microchip Technology Inc IRG4PC30KDPBF vs APT35GN120SG
IRGBC40U Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IRG4PC30KDPBF vs IRGBC40U
HGTP12N60D1 Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation IRG4PC30KDPBF vs HGTP12N60D1
HGTG30N60C3 Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation IRG4PC30KDPBF vs HGTG30N60C3
IRGBC40K Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IRG4PC30KDPBF vs IRGBC40K
HGT1S12N60B3 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA, PLASTIC PACKAGE-3 Harris Semiconductor IRG4PC30KDPBF vs HGT1S12N60B3
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRG4PC30KDPBF vs SGP13N60UF
1MB20D-060 Insulated Gate Bipolar Transistor, 38A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN Fuji Electric Co Ltd IRG4PC30KDPBF vs 1MB20D-060
IRG4BC20UPBF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRG4PC30KDPBF vs IRG4BC20UPBF
GT50J121 TRANSISTOR 50 A, 600 V, N-CHANNEL IGBT, 2-21F2C-3, Insulated Gate BIP Transistor Toshiba America Electronic Components IRG4PC30KDPBF vs GT50J121

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