Datasheets
IRG4BC30K-STRL by: International Rectifier

Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3

Part Details for IRG4BC30K-STRL by International Rectifier

Overview of IRG4BC30K-STRL by International Rectifier

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Applications Industrial Automation Energy and Power Systems Electronic Manufacturing

Part Details for IRG4BC30K-STRL

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IRG4BC30K-STRL Part Data Attributes

IRG4BC30K-STRL International Rectifier
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IRG4BC30K-STRL International Rectifier Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 28 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 170 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 380 ns
Turn-on Time-Nom (ton) 54 ns

Alternate Parts for IRG4BC30K-STRL

This table gives cross-reference parts and alternative options found for IRG4BC30K-STRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4BC30K-STRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4BC30K-STRRPBF Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRG4BC30K-STRL vs IRG4BC30K-STRRPBF
IRG4BC30K-SPBF Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRG4BC30K-STRL vs IRG4BC30K-SPBF
Part Number Description Manufacturer Compare
HGT1S3N60B3S Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation IRG4BC30K-STRL vs HGT1S3N60B3S
HGTP7N60B3 Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation IRG4BC30K-STRL vs HGTP7N60B3
GT10J312 TRANSISTOR 10 A, 600 V, N-CHANNEL IGBT, 2-10S1C, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components IRG4BC30K-STRL vs GT10J312
IXSH35N100A Insulated Gate Bipolar Transistor, 70A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRG4BC30K-STRL vs IXSH35N100A
IKA06N60TXKSA1 Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IRG4BC30K-STRL vs IKA06N60TXKSA1
IRG4PC50U Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IRG4BC30K-STRL vs IRG4PC50U
IRG4PC30KD Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IRG4BC30K-STRL vs IRG4PC30KD
IXGH28N60BD1 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRG4BC30K-STRL vs IXGH28N60BD1
HGTP7N60A4D Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation IRG4BC30K-STRL vs HGTP7N60A4D
SGH40N60UFD Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN Samsung Semiconductor IRG4BC30K-STRL vs SGH40N60UFD

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