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Transistors IGBTs IRG4BC20UDPBF

IRG4BC20UDPBF
Description: Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3

Overview of IRG4BC20UDPBF by Infineon Technologies AG

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Price & Stock for IRG4BC20UDPBF by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
South Electronics IRG4BC20UDPBF 0
RFQ

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Part Data Attributes for IRG4BC20UDPBF by Infineon Technologies AG
Parametric Data

IRG4BC20UDPBF
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
LEAD FREE PACKAGE-3
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Case Connection
COLLECTOR
Collector Current-Max (IC)
13 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf)
170 ns
Gate-Emitter Thr Voltage-Max
6 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
60 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
320 ns
Turn-on Time-Nom (ton)
55 ns
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  1. IRG4BC20UDPBF
    Infineon Technologies AG
    Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3
    VS

Alternate Parts for IRG4BC20UDPBF

This table gives cross-reference parts and alternative options found for IRG4BC20UDPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4BC20UDPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRG4BC20UDPBF vs SGP13N60UF
IRGBC40U Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IRG4BC20UDPBF vs IRGBC40U
STGW12NB60HD 24A, 600V, N-CHANNEL IGBT, TO-247, TO-247, 3 PIN STMicroelectronics IRG4BC20UDPBF vs STGW12NB60HD
IRG4BC40W Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRG4BC20UDPBF vs IRG4BC40W
HGTG11N120CND_NL Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation IRG4BC20UDPBF vs HGTG11N120CND_NL
SGP07N120 Insulated Gate Bipolar Transistor, 16.5A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IRG4BC20UDPBF vs SGP07N120
APT30GT60BRD Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Advanced Power Technology IRG4BC20UDPBF vs APT30GT60BRD
IXGH17N100 Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRG4BC20UDPBF vs IXGH17N100
IRG4IBC10UDPBF Insulated Gate Bipolar Transistor, 6.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, FULL PACK-3 Infineon Technologies AG IRG4BC20UDPBF vs IRG4IBC10UDPBF
IRG4BC15MDPBF Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRG4BC20UDPBF vs IRG4BC15MDPBF

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