Datasheets
IRG4BC20SPBF by:

Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN

Part Details for IRG4BC20SPBF by Infineon Technologies AG

Overview of IRG4BC20SPBF by Infineon Technologies AG

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Price & Stock for IRG4BC20SPBF

Part # Distributor Description Stock Price Buy
DISTI # 70017061
RS 600V DC-1 KHZ (STANDARD) DISCRETE IGBT IN A TO-220AB PACKAGE | Infineon IRG4BC20SPBF RoHS: Not Compliant Min Qty: 600 Package Multiple: 1 Container: Bulk 0
  • 600 $2.1600
  • 3,000 $2.0500
  • 6,000 $1.9400
  • 60,000 $1.8300
  • 150,000 $1.7300
$1.7300 / $2.1600 RFQ

Part Details for IRG4BC20SPBF

IRG4BC20SPBF CAD Models

IRG4BC20SPBF Part Data Attributes

IRG4BC20SPBF Infineon Technologies AG
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IRG4BC20SPBF Infineon Technologies AG Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-220AB, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 1997-03-11
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 19 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1540 ns
Turn-on Time-Nom (ton) 38 ns

Alternate Parts for IRG4BC20SPBF

This table gives cross-reference parts and alternative options found for IRG4BC20SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4BC20SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4BC20S Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRG4BC20SPBF vs IRG4BC20S
Part Number Description Manufacturer Compare
GT15H101 TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components IRG4BC20SPBF vs GT15H101
IRGBC30FD2 Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IRG4BC20SPBF vs IRGBC30FD2
SGH20N60RUFD Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN Samsung Semiconductor IRG4BC20SPBF vs SGH20N60RUFD
IRGPC50S Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN International Rectifier IRG4BC20SPBF vs IRGPC50S
IXGH28N60BD1 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRG4BC20SPBF vs IXGH28N60BD1
IRGPC40F Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier IRG4BC20SPBF vs IRGPC40F
IXSH20N60AU1 Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD IXYS Corporation IRG4BC20SPBF vs IXSH20N60AU1
HGTG30N60C3D_NL Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation IRG4BC20SPBF vs HGTG30N60C3D_NL
IXGH28N60B Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRG4BC20SPBF vs IXGH28N60B
IXSH24N60BD1 Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN IXYS Corporation IRG4BC20SPBF vs IXSH24N60BD1

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