Part Details for IRFS630 by Samsung Semiconductor
Overview of IRFS630 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for IRFS630
IRFS630 CAD Models
IRFS630 Part Data Attributes:
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IRFS630
Samsung Semiconductor
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Datasheet
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IRFS630
Samsung Semiconductor
Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | SFM | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 5.9 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 35 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFS630
This table gives cross-reference parts and alternative options found for IRFS630. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS630, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF630FI | 6A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, ISOWATT220, 3 PIN | STMicroelectronics | IRFS630 vs IRF630FI |
| 2SK2520-01MR | Power Field-Effect Transistor, 10A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F15, 3 PIN | Fuji Electric Co Ltd | IRFS630 vs 2SK2520-01MR |
| IRFI630GPBF | Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3 | International Rectifier | IRFS630 vs IRFI630GPBF |
| BUK444-200A | TRANSISTOR 5.3 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power | NXP Semiconductors | IRFS630 vs BUK444-200A |
| YTAF630 | TRANSISTOR 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | IRFS630 vs YTAF630 |
| STP10NB20FP | 6A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN | STMicroelectronics | IRFS630 vs STP10NB20FP |
| BUK444-200B | TRANSISTOR 4.7 A, 200 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power | NXP Semiconductors | IRFS630 vs BUK444-200B |
| IRFS631 | Power Field-Effect Transistor, 5.9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRFS630 vs IRFS631 |