Part Details for IRFS3307ZTRRPBF by Infineon Technologies AG
Overview of IRFS3307ZTRRPBF by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for IRFS3307ZTRRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IRFS3307ZTRRPBFCT-ND
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DigiKey | MOSFET N-CH 75V 120A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
743 In Stock |
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$1.3074 / $2.8000 | Buy Now |
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DISTI #
IRFS3307ZTRRPBF
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Avnet Americas | Trans MOSFET N-CH 75V 120A 3-Pin D2PAK T/R - Tape and Reel (Alt: IRFS3307ZTRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.2202 / $1.4817 | Buy Now |
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DISTI #
942-IRFS3307ZTRRPBF
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Mouser Electronics | MOSFET 75V 1 N-CH HEXFET 5.8mOhms 79nC RoHS: Compliant | 766 |
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$1.3000 / $2.7900 | Buy Now |
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Future Electronics | Single N-Channel 75V 5.8 mOhm 79 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$1.3300 / $1.3900 | Buy Now |
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Future Electronics | Single N-Channel 75V 5.8 mOhm 79 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$1.3300 / $1.3900 | Buy Now |
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DISTI #
76433997
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Verical | Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2335 | Americas - 37600 |
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$1.4032 | Buy Now |
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DISTI #
70338397
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Verical | Trans MOSFET N-CH Si 75V 128A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2335 | Americas - 20000 |
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$1.2839 / $1.4338 | Buy Now |
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Rochester Electronics | IRFS3307 - HEXFET Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 15200 |
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$1.3000 / $1.5300 | Buy Now |
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Ameya Holding Limited | Min Qty: 200 | 2400 |
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$2.7132 / $2.7972 | Buy Now |
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Ameya Holding Limited | Single N-Channel 75V 5.8 mOhm 79 nC HEXFET® Power Mosfet - D2PAK | 383 |
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RFQ |
Part Details for IRFS3307ZTRRPBF
IRFS3307ZTRRPBF CAD Models
IRFS3307ZTRRPBF Part Data Attributes
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IRFS3307ZTRRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFS3307ZTRRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0058 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 230 W | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFS3307ZTRRPBF
This table gives cross-reference parts and alternative options found for IRFS3307ZTRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS3307ZTRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFS3307ZTRLPBF | Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | IRFS3307ZTRRPBF vs IRFS3307ZTRLPBF |
| IRFS3307ZTRRPBF | Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | IRFS3307ZTRRPBF vs IRFS3307ZTRRPBF |
| IRFS3307ZPBF | Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | IRFS3307ZTRRPBF vs IRFS3307ZPBF |
| IRFS3307ZPBF | Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | IRFS3307ZTRRPBF vs IRFS3307ZPBF |