Part Details for IRFS3307ZPBF by Infineon Technologies AG
Overview of IRFS3307ZPBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFS3307ZPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFS3307ZPBF-ND
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DigiKey | MOSFET N-CH 75V 120A D2PAK Lead time: 98 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
DISTI #
70017958
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RS | MOSFET, N Ch., 75V, 120A, 5.8 MOHM, 79 NC QG, D2-PAK, Pb-Free | Infineon IRFS3307ZPBF RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Container: Bulk | 0 |
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$2.4800 | RFQ |
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Win Source Electronics | MOSFET N-CH 75V 120A D2PAK | 1562 |
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$1.3550 / $2.0320 | Buy Now |
Part Details for IRFS3307ZPBF
IRFS3307ZPBF CAD Models
IRFS3307ZPBF Part Data Attributes
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IRFS3307ZPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFS3307ZPBF
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 140 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0058 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 230 W | |
Pulsed Drain Current-Max (IDM) | 480 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFS3307ZPBF
This table gives cross-reference parts and alternative options found for IRFS3307ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS3307ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFS3307ZTRRPBF | Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | International Rectifier | IRFS3307ZPBF vs IRFS3307ZTRRPBF |
IRFS3307ZTRLPBF | Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | IRFS3307ZPBF vs IRFS3307ZTRLPBF |
IRFS3307ZTRRPBF | Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | IRFS3307ZPBF vs IRFS3307ZTRRPBF |