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Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-2/3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
40M7905
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Newark | P Channel Mosfet, -55V, 18A, D-Pak, Channel Type:P Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:18A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFR5505TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 95316 |
|
$0.2870 / $1.2000 | Buy Now |
DISTI #
99AK9906
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Newark | Mosfet, P-Channel, 55V, 18A, To-252Aa Rohs Compliant: Yes |Infineon IRFR5505TRPBF RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel | 2000 |
|
$0.4260 / $0.4620 | Buy Now |
DISTI #
38AH8478
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Newark | Planar 40 RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4460 | Buy Now |
DISTI #
IRFR5505PBFCT-ND
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DigiKey | MOSFET P-CH 55V 18A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
98675 In Stock |
|
$0.4095 / $1.6600 | Buy Now |
DISTI #
40M7905
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Avnet Americas | Trans MOSFET P-CH 55V 18A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 40M7905) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 12899 Partner Stock |
|
$0.3320 / $1.2000 | Buy Now |
DISTI #
IRFR5505TRPBF
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Avnet Americas | Trans MOSFET P-CH 55V 18A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR5505TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$0.3035 | Buy Now |
DISTI #
IRFR5505TRPBF
|
Avnet Americas | Trans MOSFET P-CH 55V 18A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR5505TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.3035 | Buy Now |
DISTI #
942-IRFR5505TRPBF
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Mouser Electronics | MOSFETs 1 P-CH -55V HEXFET 110mOhms 21.3nC RoHS: Compliant | 28946 |
|
$0.4040 / $0.9800 | Buy Now |
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Future Electronics | Single P-Channel 55 V 0.11 Ohm 32 nC HEXFET® Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks Container: Reel | 104000Reel |
|
$0.3950 / $0.4250 | Buy Now |
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Future Electronics | Single P-Channel 55 V 0.11 Ohm 32 nC HEXFET® Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks Container: Reel | 0Reel |
|
$0.3150 / $0.3350 | Buy Now |
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IRFR5505TRPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRFR5505TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-2/3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.11 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 57 W | |
Pulsed Drain Current-Max (IDM) | 64 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFR5505TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR5505TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR5505TRLPBF | Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-2/3 | Infineon Technologies AG | IRFR5505TRPBF vs IRFR5505TRLPBF |
AUIRFR5505 | Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR5505TRPBF vs AUIRFR5505 |
AUIRFR5505TRL | Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR5505TRPBF vs AUIRFR5505TRL |