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Transistors Power Field-Effect Transistors AUIRFR5505TRL

AUIRFR5505TRL
Description: Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

Overview of AUIRFR5505TRL by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Renewable Energy

Price & Stock for AUIRFR5505TRL by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # AUIRFR5505TRL-ND
DigiKey MOSFET P-CH 55V 18A DPAK Lead time: 39 Weeks Container: Tape & Reel (TR) Limited Supply - Call
Buy Now
DISTI # AUIRFR5505TRL
Avnet Americas Trans MOSFET P-CH 55V 18A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: AUIRFR5505TRL) RoHS: Compliant Min Qty: 422 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 1604 Partner Stock
  • 422 $0.8477
  • 430 $0.8358
  • 850 $0.8299
  • 2,200 $0.8062
  • 4,300 $0.7884
  • 22,000 $0.7647
  • 43,000 $0.7529
$0.7529 / $0.8477 Buy Now
DISTI # AUIRFR5505TRL
Avnet Americas Trans MOSFET P-CH 55V 18A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: AUIRFR5505TRL) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
RFQ
DISTI # SP001519572
EBV Elektronik Trans MOSFET P-CH 55V 18A 3-Pin(2+Tab) DPAK T/R (Alt: SP001519572) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 53 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for AUIRFR5505TRL by Infineon Technologies AG
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Part Data Attributes for AUIRFR5505TRL by Infineon Technologies AG
Parametric Data

AUIRFR5505TRL
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
ROHS COMPLIANT, PLASTIC, DPAK-3
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas)
150 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
18 A
Drain-source On Resistance-Max
0.11 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
57 W
Pulsed Drain Current-Max (IDM)
64 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. AUIRFR5505TRL
    Infineon Technologies AG
    Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
    VS

Alternate Parts for AUIRFR5505TRL

This table gives cross-reference parts and alternative options found for AUIRFR5505TRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFR5505TRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFR5505TRLPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-2/3 Infineon Technologies AG AUIRFR5505TRL vs IRFR5505TRLPBF
AUIRFR5505 Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Infineon Technologies AG AUIRFR5505TRL vs AUIRFR5505
Part Number Description Manufacturer Compare
AUIRFR5505 Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Infineon Technologies AG AUIRFR5505TRL vs AUIRFR5505
IRFU5505PBF Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, HALOGEN AND LEAD FREE, PLASTIC, IPAK-3 Infineon Technologies AG AUIRFR5505TRL vs IRFU5505PBF
IRFR5505TRPBF Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-2/3 Infineon Technologies AG AUIRFR5505TRL vs IRFR5505TRPBF

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