Datasheets
IRFR214TRRPBF by:

Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

Part Details for IRFR214TRRPBF by Vishay Intertechnologies

Overview of IRFR214TRRPBF by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRFR214TRRPBF

Part # Distributor Description Stock Price Buy
DISTI # IRFR214TRRPBF
Avnet Americas Trans MOSFET N-CH 250V 2.2A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR214TRRPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.5478
  • 6,000 $0.5302
  • 12,000 $0.5126
  • 18,000 $0.4951
  • 24,000 $0.4759
  • 30,000 $0.4536
  • 300,000 $0.4312
$0.4312 / $0.5478 Buy Now
DISTI # 844-IRFR214TRRPBF
Mouser Electronics MOSFET 250V N-CH HEXFET D-PAK RoHS: Compliant 0
  • 3,000 $0.5590
  • 6,000 $0.5500
  • 9,000 $0.5240
$0.5240 / $0.5590 Order Now
Bristol Electronics   2889
RFQ
Quest Components   2311
  • 1 $1.7280
  • 232 $0.6912
  • 1,158 $0.6048
$0.6048 / $1.7280 Buy Now
DISTI # IRFR214TRRPBF
TTI MOSFET 250V N-CH HEXFET D-PAK RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $0.4890
  • 6,000 $0.4790
  • 9,000 $0.4700
  • 18,000 $0.4610
  • 30,000 $0.4520
$0.4520 / $0.4890 Buy Now
DISTI # IRFR214TRRPBF
EBV Elektronik Trans MOSFET N-CH 250V 2.2A 3-Pin(2+Tab) DPAK T/R (Alt: IRFR214TRRPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRFR214TRRPBF

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IRFR214TRRPBF Part Data Attributes

IRFR214TRRPBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFR214TRRPBF Vishay Intertechnologies Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-252AA
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 190 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 2.2 A
Drain-source On Resistance-Max 2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 8.8 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR214TRRPBF

This table gives cross-reference parts and alternative options found for IRFR214TRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR214TRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2SK2250-01S Power Field-Effect Transistor, 2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, KPACK-3 Fuji Electric Co Ltd IRFR214TRRPBF vs 2SK2250-01S
IRFR214TRPBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Vishay Siliconix IRFR214TRRPBF vs IRFR214TRPBF
IRFR214TRPBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR214TRRPBF vs IRFR214TRPBF
IRFR214TRLPBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR214TRRPBF vs IRFR214TRLPBF
IRFR214 Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR214TRRPBF vs IRFR214
IRFR214PBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR214TRRPBF vs IRFR214PBF
IRFR214TRLPBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR214TRRPBF vs IRFR214TRLPBF
IRFR214TRRPBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR214TRRPBF vs IRFR214TRRPBF
IRFR214 Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR214TRRPBF vs IRFR214
IRFR214TRL Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR214TRRPBF vs IRFR214TRL
Part Number Description Manufacturer Compare
IRFR214TRR Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR214TRRPBF vs IRFR214TRR
IRFR214 2.2A, 250V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRFR214TRRPBF vs IRFR214
IRFR214TRPBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR214TRRPBF vs IRFR214TRPBF
IRFR214TRLPBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR214TRRPBF vs IRFR214TRLPBF
IRFR214TRL Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR214TRRPBF vs IRFR214TRL
IRFR214 Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR214TRRPBF vs IRFR214
IRFR214 Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR214TRRPBF vs IRFR214
IRFR214TRRPBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR214TRRPBF vs IRFR214TRRPBF
2SK2250-01S Power Field-Effect Transistor, 2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, KPACK-3 Fuji Electric Co Ltd IRFR214TRRPBF vs 2SK2250-01S
IRFR214TRLPBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR214TRRPBF vs IRFR214TRLPBF

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