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Transistors Power Field-Effect Transistors IRFR214PBF

Transistors
IRFR214PBF
Description: Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

Overview of IRFR214PBF by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

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Part Data Attributes for IRFR214PBF by International Rectifier
Parametric Data

IRFR214PBF
International Rectifier
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
TO-252AA
Package Description
LEAD FREE, PLASTIC, DPAK-3
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
190 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
250 V
Drain Current-Max (ID)
2.2 A
Drain-source On Resistance-Max
2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
25 W
Pulsed Drain Current-Max (IDM)
8.8 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFR214PBF
    International Rectifier
    Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
    VS

Alternate Parts for IRFR214PBF

This table gives cross-reference parts and alternative options found for IRFR214PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR214PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFR214 Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Fairchild Semiconductor Corporation IRFR214PBF vs IRFR214
IRFR214TRLPBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR214PBF vs IRFR214TRLPBF
IRFR214TRLPBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Vishay Siliconix IRFR214PBF vs IRFR214TRLPBF
IRFR214TR Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR214PBF vs IRFR214TR
IRFR214TRPBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR214PBF vs IRFR214TRPBF
IRFR214TRRPBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR214PBF vs IRFR214TRRPBF
IRFR214TRLPBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR214PBF vs IRFR214TRLPBF
IRFR214PBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Vishay Siliconix IRFR214PBF vs IRFR214PBF
IRFR214 Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR214PBF vs IRFR214
IRFR214 Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR214PBF vs IRFR214
Part Number Description Manufacturer Compare
IRFR214PBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Vishay Siliconix IRFR214PBF vs IRFR214PBF
IRFR214TRPBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR214PBF vs IRFR214TRPBF
IRFR214TRRPBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR214PBF vs IRFR214TRRPBF
2SK2250-01S Power Field-Effect Transistor, 2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, KPACK-3 Fuji Electric Co Ltd IRFR214PBF vs 2SK2250-01S
IRFR214PBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR214PBF vs IRFR214PBF
IRFR214TRLPBF Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR214PBF vs IRFR214TRLPBF
IRFR214TRR Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR214PBF vs IRFR214TRR
IRFR214 2.2A, 250V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRFR214PBF vs IRFR214
IRFR214 Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR214PBF vs IRFR214
IRFR214 Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR214PBF vs IRFR214

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