Part Details for IRFPE40 by International Rectifier
Overview of IRFPE40 by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRFPE40
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | MOSFET Transistor, N-Channel, TO-247AC | 24 |
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$3.0000 / $6.0000 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 49 |
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$2.5000 / $3.8500 | Buy Now |
Part Details for IRFPE40
IRFPE40 CAD Models
IRFPE40 Part Data Attributes:
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IRFPE40
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFPE40
International Rectifier
Power Field-Effect Transistor, 5.4A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 490 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 5.4 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 150 W | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFPE40
This table gives cross-reference parts and alternative options found for IRFPE40. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFPE40, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUZ356 | Power Field-Effect Transistor, 5A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | Siemens | IRFPE40 vs BUZ356 |
| IRFPE40PBF | Power Field-Effect Transistor, 5.4A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN | Vishay Intertechnologies | IRFPE40 vs IRFPE40PBF |
| 2SK2765-01 | Power Field-Effect Transistor, 7A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fuji Electric Co Ltd | IRFPE40 vs 2SK2765-01 |
| STHV82 | 5.5A, 800V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | IRFPE40 vs STHV82 |
| SSH6N80 | Power Field-Effect Transistor, 6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | IRFPE40 vs SSH6N80 |
| 2SK955 | Power Field-Effect Transistor, 5A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, 3 PIN | Fuji Electric Co Ltd | IRFPE40 vs 2SK955 |
| BUK438-800B | TRANSISTOR 6.6 A, 800 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | IRFPE40 vs BUK438-800B |