Part Details for IRFM240 by TT Electronics Resistors
Overview of IRFM240 by TT Electronics Resistors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFM240
IRFM240 CAD Models
IRFM240 Part Data Attributes
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IRFM240
TT Electronics Resistors
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Datasheet
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IRFM240
TT Electronics Resistors
Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TT ELECTRONICS PLC | |
Package Description | FLANGE MOUNT, S-MSFM-P3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.25 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-254AA | |
JESD-30 Code | S-MSFM-P3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 72 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IRFM240
This table gives cross-reference parts and alternative options found for IRFM240. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFM240, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFM240PBF | Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | International Rectifier | IRFM240 vs IRFM240PBF |
IRFM240-QR-BR1 | Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 | TT Electronics Resistors | IRFM240 vs IRFM240-QR-BR1 |
2N7219 | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN | Sensitron Semiconductors | IRFM240 vs 2N7219 |
2N7219R1 | 18A, 200V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 | TT Electronics Power and Hybrid / Semelab Limited | IRFM240 vs 2N7219R1 |
JANTX2N7219 | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Microsemi Corporation | IRFM240 vs JANTX2N7219 |
IRFM240-JQR-B | Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 | TT Electronics Resistors | IRFM240 vs IRFM240-JQR-B |
IRFM240 | 18A, 200V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 | TT Electronics Power and Hybrid / Semelab Limited | IRFM240 vs IRFM240 |
JANTXV2N7219 | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Microsemi Corporation | IRFM240 vs JANTXV2N7219 |
IRFM240-JQR-BR1 | Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 | TT Electronics Resistors | IRFM240 vs IRFM240-JQR-BR1 |
IRFM240 | Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | Infineon Technologies AG | IRFM240 vs IRFM240 |